Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| PH3120L | N-channel TrenchMOS(tm) logic level FET |
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NXP |
MOSFET |
N | 1 | 20 | - | - | - | 3 | 2.25 | 100 | 62.5 |
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| 2N7002E | N-Channel 60-V MOSFET |
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Vishay |
MOSFET |
N | 1 | 60 | - | - | - | 1800 | 1200 | 0.24 | 0.35 |
SOT-23-3 |
| IRF6717 | Single N-Channel HEXFET Power MOSFET in a DirectFET MX package |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 25 | - | - | - | 1.6 | 0.95 | 38 | 2.8 |
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| STP4NK60ZFP | N-channel 600 V - 1.76 ? - 4 A SuperMESH™ Power MOSFET TO-220FP |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 176 | 4 | 25 |
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| NTMFS4833N | Power MOSFET 30 V, 191 A, Single N?Channel, SO?8 FL |
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ON Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 2.3 | 1.3 | 26 | 2.35 |
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| PSMN3R2-30YLC | N-канальный MOSFET-транзистор, изготовленный по технологии NextPower |
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NXP |
MOSFET |
N | 1 | 30 | 3.5 | 3.5 | 3.5 | 3.5 | 3.5 | 100 | 92 |
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| IRF5806 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 147 | 86 | - | 4 | 2 |
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| FDP8874 | N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 4.5 | 3.6 | 114 | 110 |
TO-220AB |
| IRFPS30N60KPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 160 | 30 | 450 |
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| STP16NF25 | N-channel 250V - 0.195? - 13A - TO-220 low gate charge STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 250 | - | - | - | - | 195 | 13 | 90 |
TO-220 |
| NTB5412N | Power MOSFET 60 Amps, 60 Volts N-Channel D2PAK |
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ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 11.1 | 60 | 125 |
D2-PAK |
| IXFP6N120P | N-канальный силовой MOSFET транзистор со встроенным быстрым диодом (HiPerFET) |
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IXYS |
MOSFET |
N | 1 | 1200 | 2750 | 2750 | 2750 | 2750 | 2750 | 6 | 250 |
TO-220AB |
| IRL3714L | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 20 | - | - | - | 28 | 20 | 36 | 43 |
TO-262 |
| FDP047N10 | N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 3.9 | 120 | 375 |
TO-220 |
| DMP2012SN | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | - | 230 | - | -0.7 | 0.5 |
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| IRFBC30A | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 2200 | 3.6 | 74 |
TO-220AB |
| STB120NF10 | N-channel 100V - 0.009? - 110A - D?PAK STripFET™ II Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 9 | 110 | 312 |
D2-PAK |
| STF30NM60ND | N-channel 600 V, 0.11 ?, 25 A FDmesh™ II Power MOSFET(with fast diode) TO-220FP |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 110 | 25 | 40 |
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| IXFT42N50P2 | N-канальный силовой MOSFET транзистор со встроенным быстрым диодом (HiPerFET) |
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IXYS |
MOSFET |
N | 1 | 500 | 145 | 145 | 145 | 145 | 145 | 42 | 830 |
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| IRFP4310ZPBF | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | - | 6 | 120 | 280 |
TO-247AC |
