Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
FDS3590 | 80V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 80 | - | - | - | - | 32 | 6.5 | 2.5 |
SOIC-8 |
|
STP4NK60ZFP | N-channel 600 V - 1.76 ? - 4 A SuperMESH™ Power MOSFET TO-220FP | STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 176 | 4 | 25 |
|
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IRFPS30N60KPBF | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 160 | 30 | 450 |
|
|
STP16NF25 | N-channel 250V - 0.195? - 13A - TO-220 low gate charge STripFET™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 250 | - | - | - | - | 195 | 13 | 90 |
TO-220 |
|
NTB5412N | Power MOSFET 60 Amps, 60 Volts N-Channel D2PAK | ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 11.1 | 60 | 125 |
D2-PAK |
|
FDP047N10 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 3.9 | 120 | 375 |
TO-220 |
|
IRFBC30A | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 2200 | 3.6 | 74 |
TO-220AB |
|
STB120NF10 | N-channel 100V - 0.009? - 110A - D?PAK STripFET™ II Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 9 | 110 | 312 |
D2-PAK |
|
STF30NM60ND | N-channel 600 V, 0.11 ?, 25 A FDmesh™ II Power MOSFET(with fast diode) TO-220FP | STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 110 | 25 | 40 |
|
|
IRFP4310ZPBF | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | - | 6 | 120 | 280 |
TO-247AC |
|
FDP5N50 | N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 1150 | 5 | 85 |
TO-220 |
|
FCP190N65F | N-канальный MOSFET-транзистор семейства SuperFET® II, 650 В, 20.6 А | Fairchild Semiconductor |
MOSFET |
N | 1 | 650 | - | - | - | - | 190 | 20.6 | 208 |
TO-220 |
|
PSMN020-150W | N-канальный TrenchMOS™ транзистор | NXP |
MOSFET |
N | 1 | 150 | - | - | - | - | 12 | 73 | 300 |
|
|
STW21NM60ND | N-channel 600 V, 0.17 ?, 17 A FDmesh™ II Power MOSFET TO-247 | STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 170 | 17 | 140 |
|
|
FDP16AN08A0 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 70 | - | - | - | - | 13 | 58 | 135 |
TO-220AB |
|
Si7462DP | N-Channel 200-V (D-S) MOSFET | Vishay |
MOSFET |
N | 1 | 200 | - | - | - | - | 110 | 2.6 | 1.9 |
PowerPAK_SO-8 |
|
IPD50N06S4-09 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor | Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 7.1 | 50 | 71 |
TO-252 |
|
STP8NM60FP | N-channel 650 V@Tjmax, 0.9 ?, 8 A MDmesh™ Power MOSFET TO-220FP | STMicroelectronics |
MOSFET |
N | 1 | 30 | - | - | - | - | 900 | 8 | 0 |
|
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BSC014N06NS | Транзистор серии OptiMOS™ на 60 В, 100 А | Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 1.45 | 100 | 156 |
|
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FQP11N40C | 400V N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 400 | - | - | - | - | 430 | 10.5 | 135 |
TO-220 |