Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
IRFP4468PbF | 100V Single N-Channel HEXFET Power MOSFET in a TO-247AC | International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | 2 | 2.6 | 195 | 520 |
TO-247AC |
|
IRFB3006PbF | 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier (IRF) |
MOSFET |
N | 1 | 60 | - | - | - | - | 2.1 | 195 | 375 |
TO-220AB |
|
IRFP4368PbF | HEXFET Power MOSFET | International Rectifier (IRF) |
MOSFET |
N | 1 | 75 | - | - | - | 1.46 | 1.85 | 195 | 520 |
TO-247AC |
|
IRFP4004PbF | HEXFET Power MOSFET | International Rectifier (IRF) |
MOSFET |
N | 1 | 40 | - | - | - | 1.35 | 1.7 | 195 | 380 |
TO-247AC |
|
IRLS4030-7PPbF | 100V Single N-Channel HEXFET Power MOSFET | International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | 3.3 | 3.2 | 190 | 370 |
D2-PAK-7 |
|
TSM190N08CZ | Силовой N-канальный MOSFET транзистор, 75 В, 190 А | Taiwan Semiconductor |
MOSFET |
N | 1 | 70 | - | - | - | - | 4.2 | 190 | 250 |
TO-220 |
|
IRF1503S | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | - | 3.3 | 190 | 200 |
D2-PAK |
|
IRF1503L | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | - | 3.3 | 190 | 200 |
TO-262 |
|
IRFS4010-7PPbF | 100V Single N-Channel HEXFET Power MOSFET | International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | - | 3.3 | 190 | 380 |
D2-PAK-7 |
|
IRFS4010-7PPbF | 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-pin package | International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | - | 3.3 | 190 | 380 |
D2-PAK-7 |
|
IRF1404ZS | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 40 | - | - | - | - | 3.7 | 190 | 220 |
D2-PAK |
|
IRF1404ZL | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 40 | - | - | - | - | 3.7 | 190 | 220 |
TO-262 |
|
IRF1404Z | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 40 | - | - | - | - | 3.7 | 190 | 220 |
TO-220AB |
|
IXFN210N20P | N-канальный силовой MOSFET транзистор со встроенным быстрым диодом (HiPerFET) | IXYS |
MOSFET |
N | 1 | 200 | 10.5 | 10.5 | 10.5 | 10.5 | 10.5 | 188 | 1070 |
|
|
IRLBA1304P | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 40 | - | - | - | 6.5 | 4 | 185 | 300 |
|
|
IXTQ182N055T | N-канальный силовой TrenchMV MOSFET транзистор | IXYS |
MOSFET |
N | 1 | 55 | 5 | 5 | 5 | 5 | 5 | 182 | 360 |
|
|
IXTH182N055T | N-канальный силовой TrenchMV MOSFET транзистор | IXYS |
MOSFET |
N | 1 | 55 | 5 | 5 | 5 | 5 | 5 | 182 | 360 |
|
|
IXTA182N055T7 | N-канальный силовой TrenchMV MOSFET транзистор | IXYS |
MOSFET |
N | 1 | 55 | 5 | 5 | 5 | 5 | 5 | 182 | 360 |
TO-263-7 |
|
IXTP182N055T | N-канальный силовой TrenchMV MOSFET транзистор | IXYS |
MOSFET |
N | 1 | 55 | 5 | 5 | 5 | 5 | 5 | 182 | 360 |
TO-220 |
|
IXTA182N055T | N-канальный силовой TrenchMV MOSFET транзистор | IXYS |
MOSFET |
N | 1 | 55 | 5 | 5 | 5 | 5 | 5 | 182 | 360 |
|