Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
IRL630A | Advanced Power MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 200 | - | - | - | 400 | - | 9 | 69 |
TO-220 |
|
STB80NF06 | N-channel 60V - 0.0065? - 80A D2PAK STripFETTM II Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 60 | - | - | - | - | 6.5 | 80 | 300 |
D2-PAK |
|
STB4NK60Z | N-channel 600 V - 1.76 ? - 4 A SuperMESH™ Power MOSFET D2PAK - I2PAK | STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 176 | 4 | 70 |
D2-PAK |
|
NTD4856N | Power MOSFET 25 V, 89 A, Single N-Channel, DPAK/IPAK | ON Semiconductor |
MOSFET |
N | 1 | 25 | - | - | - | 5.3 | 3.9 | 16.8 | 2.14 |
D-PAK |
|
IXFH36N55Q2 | N-канальный силовой MOSFET транзистор со встроенным быстрым диодом (HiPerFET) | IXYS |
MOSFET |
N | 1 | 550 | 180 | 180 | 180 | 180 | 180 | 36 | 560 |
|
|
IRF1404S | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 40 | - | - | - | - | 4 | 162 | 200 |
D2-PAK |
|
FDPF10N50FT | N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 710 | 9 | 42 |
TO-220F |
|
IRFR210PBF | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 200 | - | - | - | - | 1500 | 2.6 | 25 |
D-PAK |
|
IRLL110 | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 100 | - | - | - | - | 540 | 1.5 | 3.1 |
SOT-223-4 |
|
STU150N3LLH6 | N-channel 30 V, 0.0024 ? , 80 A, IPAK STripFET™ VI DeepGATE™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 30 | - | - | - | 3.9 | 2.9 | 80 | 110 |
|
|
SUP28N15-52 | N-Channel 150-V (D-S) 175°C MOSFET | Vishay |
MOSFET |
N | 1 | 150 | - | - | - | - | 42 | 28 | 120 |
TO-220 |
|
STD8NM60N | N-channel 600 V, 0.56 ?,7 A MDmesh™ II Power MOSFET IPAK, DPAK | STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 560 | 7 | 70 |
D-PAK |
|
IXFV52N30PS | N-канальный силовой MOSFET транзистор со встроенным быстрым диодом (HiPerFET) | IXYS |
MOSFET |
N | 1 | 300 | 66 | 66 | 66 | 66 | 66 | 52 | 400 |
|
|
IRFZ44NS | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 55 | - | - | - | - | 17.5 | 49 | 110 |
D2-PAK |
|
FQPF8N90C | 900V N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 900 | - | - | - | - | 1600 | 6.3 | 60 |
TO-220 |
|
STS9D8NH3LL | Dual N-channel 30 V - 0.012 ? - 9 A - SO-8 low on-resistance STripFET™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 2 | 30 | - | - | - | 20 | 18 | 8 | 2 |
SOIC-8 |
|
PSMN2R5-30YL | N-channel TrenchMOS logic level FET | NXP |
MOSFET |
N | 1 | 30 | - | - | - | - | 1.79 | 100 | 88 |
|
|
IRFBG20 | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 1000 | - | - | - | - | 11000 | 1.4 | 54 |
TO-220AB |
|
Si4686DY | N-Channel 30-V (D-S) MOSFET | Vishay |
MOSFET |
N | 1 | 30 | - | - | - | 11 | 7.8 | 18.2 | 5.2 |
SOIC-8 |
|
STF21NM60ND | N-channel 600 V, 0.17 ?, 17 A FDmesh™ II Power MOSFET TO-220FP | STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 170 | 17 | 30 |
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