Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
NTQD6968N | Power MOSFET 7.0 A, 20 V, Common Drain, Dual N?Channel, TSSOP?8 | ON Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 17 | - | 7 | 1.81 |
TSSOP-8 |
|
IRF7325 | HEXFET Power MOSFETs Dual P-Channel | International Rectifier (IRF) |
MOSFET |
P | 2 | 12 | - | - | 33 | 24 | - | 7.8 | 2 |
SOIC-8 |
|
SiA914DJ | Dual N-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
N | 2 | 20 | 62 | - | 52 | 43 | - | 4.5 | 6.5 |
PowerPAK SC70-6 |
|
Si3981DV | Dual P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 2 | 20 | 306 | - | 210 | 146 | - | 1.6 | 0.8 |
|
|
Si6954ADQ | N-Channel 2.5-V (G-S) Battery Switch | Vishay |
MOSFET |
N | 2 | 30 | - | - | - | 62 | 44 | 3.1 | 0.83 |
TSSOP-8 |
|
FDS6984AS | Dual Notebook Power Supply N-Channel PowerTrench SyncFET | Fairchild Semiconductor |
MOSFET |
N | 2 | 30 | - | - | - | 32 | 26 | 5.5 | 1.6 |
SOIC-8 |
|
DMP2004DMK | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 2 | -20 | 1700 | - | - | 700 | - | -0.55 | 0.5 |
|
|
Si4953ADY | 30-V (D-S) Dual | Vishay |
MOSFET |
P | 2 | 30 | - | - | - | 75 | 45 | 3.7 | 1.1 |
SOIC-8 |
|
Si1972DH | Dual N-Channel 30-V (D-S) MOSFET | Vishay |
MOSFET |
N | 2 | 30 | - | - | - | 278 | 155 | 1.3 | 1.25 |
SC70-6 |
|
NTHD5903 | Power MOSFET ?20 V, ?3.0 A, Dual P?Channel ChipFET | ON Semiconductor |
MOSFET |
P | 2 | -20 | - | - | - | 130 | - | -3 | 2.1 |
ChipFET_1206-8 |
|
IRF7380 | HEXFET Power MOSFETs Dual N-Channel | International Rectifier (IRF) |
MOSFET |
N | 2 | 80 | - | - | - | - | 73 | 3.6 | 2 |
SOIC-8 |
|
NTLGD3502N | Power MOSFET 20 V, 5.8 A/4.6 A Dual N-Channel, DFN6 3x3 mm Package | ON Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 50 | - | 4.3 | 1.74 |
|
|
IRF7328 | HEXFET Power MOSFETs Dual P-Channel | International Rectifier (IRF) |
MOSFET |
P | 2 | 30 | - | - | - | 32 | 21 | 8 | 2 |
SOIC-8 |
|
2N7002DW | N-Channel Enhancement Mode Field Effect Transistor | Fairchild Semiconductor |
MOSFET |
N | 2 | 60 | - | - | - | 1600 | 2530 | 0.115 | 0.2 |
SC70-6 |
|
2N7002VA | N-Channel Enhancement Mode Field Effect Transistor | Fairchild Semiconductor |
MOSFET |
N | 2 | 60 | - | - | - | 1600 | - | 0.28 | 0.25 |
|
|
Si3911DV | Dual P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 2 | 20 | 240 | - | 163 | 115 | - | 1.8 | 0.83 |
|
|
Si6928DQ | 30-V (D-S) Dual | Vishay |
MOSFET |
N | 2 | 30 | - | - | - | 38 | 27 | 4 | 1 |
TSSOP-8 |
|
SiZ340DT | Сдвоенный силовой MOSFET-транзистор 30 В / 40 А, выполненный по технологии TrenchFET 4-го поколения в корпусе PowerPAIR® размером 3 х 3 мм | Vishay |
MOSFET |
N | 2 | 30 | - | - | - | 1.1 | 7.9 | 40 | 31 |
|
|
Si4925BDY | Dual P-Channel 30-V (D-S) MOSFET | Vishay |
MOSFET |
P | 2 | 30 | - | - | - | 33 | 20 | 5.3 | 1.1 |
SOIC-8 |
|
FDMS9600S | Dual N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 2 | 30 | - | - | - | 9.2 | 7 | 32 | 2.5 |
Power 56 |