Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
IRFI9610GPBF | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 3000 | 2 | 27 |
TO-220F |
|
DMP2004DWK | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 2 | -20 | 1700 | - | - | 700 | - | -0.43 | 0.25 |
|
|
Si1403BDL | P-Channel 2.5-V (G-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | - | - | 220 | 120 | - | 1.4 | 0.568 |
SC70-6 |
|
IRF7754 | HEXFET Power MOSFETs Dual P-Channel | International Rectifier (IRF) |
MOSFET |
P | 2 | 12 | - | - | 34 | 25 | - | 5.5 | 1 |
TSSOP-8 |
|
ZVP2106A | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | Zetex |
MOSFET |
P | 1 | -60 | - | - | - | - | 5000 | -0.28 | 0.7 |
TO-92 |
|
Si6983DQ | Dual P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 2 | 20 | 33 | - | 24 | 19 | - | 4.6 | 0.83 |
TSSOP-8 |
|
IXTH50P10 | Силовой P-канальный MOSFET-транзистор | IXYS |
MOSFET |
P | 1 | -100 | 55 | 55 | 55 | 55 | 55 | -50 | 300 |
|
|
Si1419DH | P-Channel 200-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 3980 | 0.3 | 1 |
SC70-6 |
|
IRF7241 | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 40 | - | - | - | 70 | 41 | 6.2 | 2.5 |
SOIC-8 |
|
NTHD2102P | Power MOSFET ?8.0 V, ?4.6 A Dual P?Channel ChipFET | ON Semiconductor |
MOSFET |
P | 2 | -8 | 100 | - | - | 50 | - | -3.4 | 1.1 |
ChipFET_1206-8 |
|
IRF9630 | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 800 | 6.5 | 74 |
TO-220AB |
|
Si7411DN | P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | 27 | - | 20 | 15 | - | 7.5 | 1.5 |
PowerPAK_1212-8 |
|
IRFR9014PBF | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 60 | - | - | - | - | 500 | 5.1 | 25 |
D-PAK |
|
DMP2305U | P-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
P | 1 | -20 | 87 | - | - | 45 | - | -4.2 | 1.4 |
SOT-23-3 |
|
Si4463BDY | P-Channel 2.5-V (G-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | - | - | 15 | 10 | 8.5 | 9.8 | 1.5 |
SOIC-8 |
|
IXTH68P20T | Силовой P-канальный MOSFET-транзистор | IXYS |
MOSFET |
P | 1 | -200 | 55 | 55 | 55 | 55 | 55 | -68 | 568 |
|
|
IXTH20P50P | Силовой P-канальный MOSFET-транзистор | IXYS |
MOSFET |
P | 1 | -500 | 450 | 450 | 450 | 450 | 450 | -20 | 462 |
|
|
IRF5810 | HEXFET Power MOSFETs Dual P-Channel | International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 135 | 90 | - | 2.9 | 0.96 |
|
|
STS4DPF20L | DUAL P-CHANNEL 20V - 0.07 W - 4A SO-8 STripFET™ POWER MOSFET | STMicroelectronics |
MOSFET |
P | 2 | 20 | - | - | - | 85 | 70 | 4 | 1.6 |
SOIC-8 |
|
BSS84V | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 2 | -50 | - | - | - | - | - | -0.13 | 0.15 |
|