Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
DMN601DMK | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 2 | 60 | - | - | - | - | 3500 | 0.305 | 0.225 |
|
|
2N7002L | Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 | ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 7500 | 0.115 | 0.225 |
SOT-23-3 |
|
DMN2004DMK | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 2 | 20 | 700 | - | - | 400 | - | 0.54 | 0.225 |
|
|
MMBF170LT1 | Power MOSFET 500 mA, 60 V N-Channel SOT-23 | ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 5000 | 0.5 | 0.225 |
SOT-23-3 |
|
MMBF0201NLT1 | Power MOSFET 300 mAmps, 20 Volts N?Channel SOT?23 | ON Semiconductor |
MOSFET |
N | 1 | 20 | - | - | - | 1000 | 750 | 0.3 | 0.225 |
SOT-23-3 |
|
Si1051X | P-Channel 8-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 8 | 117 | - | 106 | 91 | - | 1.2 | 0.236 |
SC89-6 |
|
Si1065X | P-Channel 12-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 12 | 158 | - | 131 | 108 | - | 1.18 | 0.236 |
SC89-6 |
|
Si1058X | N-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
N | 1 | 20 | - | - | 103 | 76 | - | 1.3 | 0.236 |
SC89-6 |
|
Si1069X | P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | - | - | 218 | 153 | - | 0.94 | 0.236 |
SC89-6 |
|
Si1056X | N-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
N | 1 | 20 | 93 | - | 82 | 74 | - | 1.32 | 0.236 |
SC89-6 |
|
Si1067X | P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | 165 | - | 138 | 125 | - | 1.06 | 0.236 |
SC89-6 |
|
Si1054X | N-Channel 12-V (D-S) MOSFET | Vishay |
MOSFET |
N | 1 | 12 | 95 | - | 87 | 79 | - | 1.32 | 0.236 |
SC89-6 |
|
Si1073X | P-Channel 30-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 202 | 144 | 0.98 | 0.236 |
SC89-6 |
|
Si1050X | N-Channel 8-V (D-S) MOSFET | Vishay |
MOSFET |
N | 1 | 8 | 85 | - | 78 | 71 | - | 1.34 | 0.236 |
SC89-6 |
|
Si1071X | P-Channel 30-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 30 | - | - | 195 | 147 | 139 | 0.96 | 0.236 |
SC89-6 |
|
Si1072X | N-Channel 30-V (D-S) MOSFET | Vishay |
MOSFET |
N | 1 | 30 | - | - | - | 107 | 77 | 1.3 | 0.236 |
SC89-6 |
|
Si1070X | N-Channel 30-V (D-S) MOSFET | Vishay |
MOSFET |
N | 1 | 30 | - | - | 116 | 82 | - | 1.2 | 0.236 |
SC89-6 |
|
DMP2004WK | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 1 | -20 | 1700 | - | - | 700 | - | -0.4 | 0.25 |
SOT-323 |
|
DMN66D0LDW | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 2 | 60 | - | - | - | - | 3000 | 0.8 | 0.25 |
|
|
BSS123 | N-канальный TrenchMOS транзистор с логическим уровнем FET | NXP |
MOSFET |
N | 1 | 100 | - | - | - | - | 3500 | 0.15 | 0.25 |
SOT-23-3 |