Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IRFB9N60A | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 750 | 9.2 | 170 |
TO-220AB |
| STF3NK80Z | N-channel 800V - 3.8? - 2.5A - TO-220FP Zener-protected SuperMESH™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 800 | - | - | - | - | 3800 | 2.5 | 25 |
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| STB20NM50 | N-channel 500V - 0.20? - 20A - D2PAK-I2PAK MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 200 | 20 | 192 |
D2-PAK |
| STU16N65M5 | N-channel 650 V, 0.270 ?, 12 A MDmesh™ V Power MOSFET IPAK |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 0.27 | 12 | 90 |
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| STF12NM60N | N-channel 600V - 0.35? - 10A - TO-220FP Second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 350 | 10 | 25 |
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| FDP15N40 | N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 400 | - | - | - | - | 240 | 15 | 170 |
TO-220 |
| TSM9N90CN | Силовой N-канальный MOSFET транзистор, 900 В, 9.5 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 900 | - | - | - | - | 1400 | 9.5 | 312 |
TO-3PN |
| STW12NM60N | N-channel 600V - 0.35? - 10A - TO-247 Second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 350 | 10 | 90 |
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| IRFB11N50APBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 520 | 11 | 170 |
TO-220AB |
| STP5NK100Z | N-channel 1000V - 2.7? - 3.5A - TO-220 Zener-protected SuperMESH™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 1000 | - | - | - | - | 2700 | 3.5 | 125 |
TO-220 |
| STP6NK50Z | N-CHANNEL 500V - 0.93? - 5.6A TO-220 Zener-Protected SuperMESH™ MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 930 | 5.6 | 90 |
TO-220 |
| TK40J60T | Silicon N Channel MOS Type (DTMOS) |
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Toshiba |
MOSFET |
N | 1 | 600 | - | - | - | - | 68 | 40 | 400 |
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| STU6N62K3 | N-channel 620 V, 1.1 ?, 5.5 A, IPAK SuperMESH3™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 620 | - | - | - | - | 1100 | 5.5 | 90 |
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| FCH47N60_F133 | 600V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 58 | 47 | 417 |
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| FCP190N60 | N-канальный MOSFET-транзистор семейства SuperFET® II, 600 В, 20.2 А |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 199 | 20.2 | 208 |
TO-220 |
| STF25NM60N | N-channel 600 V, 0.130 ? , 21 A, MDmesh™ II Power MOSFET TO-220FP |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 130 | 21 | 40 |
TO-220 |
| IRFIBE30G | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 800 | - | - | - | - | 3000 | 2.1 | 35 |
TO-220F |
| STB14NK60Z-1 | N-channel 600V - 0.45Ом - 13.5A Zener-protected SuperMESHTM Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 450 | 13.5 | 160 |
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| STP10NM65N | N-channel 650 V, 0.43 ?, 9 A MDmesh™ II Power MOSFET TO-220 |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 430 | 9 | 90 |
TO-220 |
| FQS4901 | 400V Dual N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 400 | - | - | - | - | 3200 | 0.45 | 2 |
SOIC-8 |
