Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
BSS138 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 60 | - | - | - | - | 3500 | 0.2 | 0.3 |
SOT-23-3 |
|
BSS123W | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 100 | - | - | - | 10000 | 6000 | 0.17 | 0.2 |
SOT-23-3 |
|
BSS123LT1 | Power MOSFET 170 mAmps, 100 Volts N?Channel SOT?23 | ON Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 5000 | 0.17 | 0.225 |
SOT-23-3 |
|
BSS123A | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | Diodes Incorporated |
MOSFET |
N | 1 | 100 | - | - | - | 10000 | 6000 | 0.17 | 0.36 |
SOT-23-3 |
|
BSS123 | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | Diodes Incorporated |
MOSFET |
N | 1 | 100 | - | - | - | - | 6000 | 0.17 | 0.36 |
SOT-23-3 |
|
BSS123 | N-канальный TrenchMOS транзистор с логическим уровнем FET | NXP |
MOSFET |
N | 1 | 100 | - | - | - | - | 3500 | 0.15 | 0.25 |
SOT-23-3 |
|
BSP89 | N-канальный D-MOS транзистор режима вертикального повышения | NXP |
MOSFET |
N | 1 | 240 | - | - | - | 7500 | 2800 | 0.375 | 1.5 |
SOT-223-4 |
|
BSP250 | P-channel enhancement mode vertical D-MOS transistor | NXP |
MOSFET |
P | 1 | 30 | - | - | - | - | 250 | 3 | 1.65 |
SOT-223-4 |
|
BSP230 | P-channel enhancement mode vertical D-MOS transistor | NXP |
MOSFET |
P | 1 | 300 | - | - | - | - | 17000 | 0.21 | 1.5 |
SOT-223-4 |
|
BSP225 | P-channel enhancement mode vertical D-MOS transistor | NXP |
MOSFET |
P | 1 | 250 | - | - | - | - | 15000 | 0.225 | 1.5 |
SOT-223-4 |
|
BSP220 | P-channel enhancement mode vertical D-MOS transistor | NXP |
MOSFET |
P | 1 | 200 | - | - | - | - | 12000 | 0.225 | 1.5 |
SOT-223-4 |
|
BSP130 | N-channel enhancement mode vertical D-MOS transistor | NXP |
MOSFET |
N | 1 | 300 | - | - | 4800 | - | 3700 | 350 | 1.5 |
SOT-223-4 |
|
BSP126 | N-channel enhancement mode vertical D-MOS transistor | NXP |
MOSFET |
N | 1 | 250 | - | - | - | - | 2800 | 375 | 1.5 |
SOT-223-4 |
|
BSP122 | N-channel enhancement mode vertical D-MOS transistor | NXP |
MOSFET |
N | 1 | 200 | - | - | 3000 | - | 1700 | 550 | 1.5 |
SOT-223-4 |
|
BSP110 | N-channel enhancement mode field-effect transistor | NXP |
MOSFET |
N | 1 | 100 | - | - | - | 5000 | - | 520 | 6.25 |
SOT-223-4 |
|
BSP100 | N-channel enhancement mode TrenchMOS (tm) transistor | NXP |
MOSFET |
N | 1 | 30 | - | - | - | 200 | 100 | 6 | 8.3 |
SOT-223-4 |
|
BSP030 | N-channel enhancement mode field-effect transistor | NXP |
MOSFET |
N | 1 | 30 | - | - | - | 30 | 20 | 10 | 8.3 |
SOT-223-4 |
|
BSN304 | N-channel enhancement mode vertical D-MOS transistor | NXP |
MOSFET |
N | 1 | 300 | - | - | 4800 | - | 3700 | 0.3 | 1 |
TO-92 |
|
BSN20 | N-channel enhancement mode field-effect transistor | NXP |
MOSFET |
N | 1 | 50 | - | - | - | - | 2800 | 173 | 0.83 |
SOT-23-3 |
|
BSH207 | P-channel enhancement mode MOS transistor | NXP |
MOSFET |
P | 1 | 12 | 140 | - | 117 | 80 | - | 1.52 | 0.417 |
|