Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
Si5401DC | P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | 44 | - | 33 | 26 | - | 5.2 | 1.3 |
ChipFET_1206-8 |
|
IRF7726 | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 30 | - | - | - | 40 | 26 | 7 | 1.79 |
|
|
IRFI9610G | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 3000 | 2 | 27 |
TO-220F |
|
DMP2004DMK | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 2 | -20 | 1700 | - | - | 700 | - | -0.55 | 0.5 |
|
|
Si1413EDH | P-Channel 20-V (D-S) MOSFET with Copper Leadframe | Vishay |
MOSFET |
P | 1 | 20 | 180 | - | 125 | 95 | - | 2.3 | 1 |
SC70-6 |
|
IRF7755 | HEXFET Power MOSFETs Dual P-Channel | International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 86 | 51 | - | 3.9 | 1 |
TSSOP-8 |
|
NTMS5P02R2 | Power MOSFET ?5.4 Amps, ?20 Volts P?Channel Enhancement?Mode Single SOIC?8 Package | ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | - | 26 | - | -7.05 | 2.5 |
SOIC-8 |
|
ZXMP3F37N8 | 30V SO8 P-channel enhancement mode MOSFET | Zetex |
MOSFET |
P | 1 | -30 | - | - | - | 41 | 25 | -8.5 | 1.56 |
SOIC-8 |
|
Si3853DV | P-Channel 20-V (D-S) Rated MOSFET with Schottky Diode | Vishay |
MOSFET |
P | 1 | 20 | - | - | 280 | 160 | - | 1.6 | 0.83 |
|
|
IXTH36P10 | Силовой P-канальный MOSFET-транзистор | IXYS |
MOSFET |
P | 1 | -100 | 75 | 75 | 75 | 75 | 75 | -36 | 180 |
|
|
Si1913EDH | P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 2 | 20 | 850 | - | 610 | 400 | - | 0.88 | 0.57 |
SC70-6 |
|
NTD3055-094 | Power MOSFET ?60 V, ?12 A, P?Channel DPAK | ON Semiconductor |
MOSFET |
P | 1 | 60 | - | - | - | - | 84 | 12 | 48 |
D-PAK |
|
IRFU5305 | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 55 | - | - | - | - | 65 | 31 | 89 |
|
|
IRF9620SPBF | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 1500 | 3.5 | 40 |
D2-PAK |
|
Si7413DN | P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | 23 | - | 16 | 12 | - | 8.4 | 1.5 |
PowerPAK_1212-8 |
|
IRFR9014 | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 60 | - | - | - | - | 500 | 5.1 | 25 |
D-PAK |
|
DMP22D6UT | P-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
P | 1 | -20 | 1700 | - | - | 700 | - | -0.43 | 0.15 |
|
|
Si4421DY | P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | 11 | - | 8.5 | 7 | - | 10 | 1.5 |
SOIC-8 |
|
IXTR20P50P | Силовой P-канальный MOSFET-транзистор | IXYS |
MOSFET |
P | 1 | -500 | 490 | 490 | 490 | 490 | 490 | -13 | 190 |
|
|
IXTR120P20T | Силовой P-канальный MOSFET-транзистор | IXYS |
MOSFET |
P | 1 | -200 | 32 | 32 | 32 | 32 | 32 | -90 | 595 |
|