Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IXTP76P10T | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -100 | 25 | 25 | 25 | 25 | 25 | -76 | 298 |
TO-220 |
| IXTA76P10T | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -100 | 25 | 25 | 25 | 25 | 25 | -76 | 298 |
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| IPP80P03P4L-04 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | 5 | 3.7 | -80 | 137 |
TO-220 |
| IPI80P03P4L-04 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | 5 | 3.7 | -80 | 137 |
TO-262 |
| IPB80P03P4L-04 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | 4.7 | 3.4 | -80 | 137 |
TO-263-3 |
| IPP80P03P4L-07 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | 8.3 | 5.9 | -80 | 88 |
TO-220 |
| IPI80P03P4L-07 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | 8.3 | 5.9 | -80 | 88 |
TO-262 |
| IPB80P03P4L-07 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | 8 | 5.6 | -80 | 88 |
TO-263-3 |
| IPP80P03P4-05 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | - | 4.1 | -80 | 137 |
TO-220 |
| IPI80P03P4-05 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | - | 4.1 | -80 | 137 |
TO-262 |
| IPB80P03P4-05 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | - | 3.8 | -80 | 137 |
TO-263-3 |
| TJ80S04M3L | Силовой P-канальный MOSFET-транзистор |
|
Toshiba |
MOSFET |
P | 1 | -40 | - | - | - | - | 5.2 | -80 | 100 |
|
| IPD80P03P4L-07 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | 8.7 | 5.6 | -80 | 88 |
TO-252 |
| IXTR140P10T | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -100 | 16 | 16 | 16 | 16 | 16 | -90 | 270 |
|
| IPD90P03P4-04 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | - | 3.6 | -90 | 137 |
TO-252 |
| IXTR120P20T | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -200 | 32 | 32 | 32 | 32 | 32 | -90 | 595 |
|
| IPD90P03P4L-04 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | 5.1 | 3.3 | -90 | 137 |
TO-252 |
| IXTN90P20P | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -200 | 44 | 44 | 44 | 44 | 44 | -90 | 890 |
SOT-227 |
| IXTK90P20P | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -200 | 44 | 44 | 44 | 44 | 44 | -90 | 890 |
|
| IXTX90P20P | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -200 | 44 | 44 | 44 | 44 | 44 | -90 | 890 |
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