Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| MSAER12N50A | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Microsemi |
MOSFET |
N | 1 | 500 | - | - | - | - | 400 | 12 | 300 |
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| NTHS5404 | Power MOSFET 20 V, 7.2 A, N?Channel ChipFET |
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ON Semiconductor |
MOSFET |
N | 1 | 20 | - | - | - | - | 25 | 7.2 | 2.5 |
ChipFET_1206-8 |
| IRFP340 | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 400 | - | - | - | - | 550 | 11 | 150 |
TO-247AC |
| IRFZ46N | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 55 | - | - | - | - | 16.5 | 53 | 88 |
TO-220AB |
| STP80NF10 | N-channel 100V - 0.012? - 80A - TO-220 Low gate charge STripFET™ II Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 12 | 80 | 300 |
TO-220 |
| STF11NM80 | N-channel 800 V - 0.35 ? - 11 A - TO-220FP MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 800 | - | - | - | - | 350 | 11 | 35 |
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| IRF740 | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 400 | - | - | - | - | 550 | 10 | 125 |
TO-220AB |
| IRFB42N20D | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 200 | - | - | - | - | 55 | 44 | 300 |
TO-220AB |
| STP95N4F3 | N-channel 40V - 5.4m? - 80A - TO-220 STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 40 | - | - | - | - | 5.4 | 80 | 110 |
TO-220 |
| FDP8441 | N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 40 | - | - | - | - | 2.1 | 80 | 300 |
TO-220AB |
| STF19NM65N | N-channel 650 V - 0.25 ? - 15.5 A - TO-220FP second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 250 | 15.5 | 35 |
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| FQP19N20 | 200V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 200 | - | - | - | - | 120 | 19.4 | 140 |
TO-220 |
| STH310N10F7-2 | N-канальный силовой транзистор MOSFET на 100 В / 180 А, выполненные по технологии STripFET™ F7 |
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STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 2.3 | 180 | 315 |
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| STF19NM65N | N-channel 650 V - 0.25 ? - 15.5 A - TO-220FP second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 250 | 15.5 | 35 |
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| STL21N65M5 | N-канальный силовой MOSFET на 650В, 0.175 Ω, 17A в корпусе PowerFLAT™ (8x8) |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 190 | 17 | 125 |
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| NCV8403 | Защищенные MOSFET-транзисторы для управления вторичными цепями |
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ON Semiconductor |
MOSFET |
N | 1 | 42 | - | - | - | - | 53 | 15 | 1.56 |
SOT-223-4 |
| IRF2804S-7P | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 40 | - | - | - | - | 1.6 | 320 | 330 |
D2-PAK |
| FDD5810 | N-Channel Logic Level Trench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 18 | 37 | 72 |
TO-252 |
| STD12NM50N | N-channel 500 V, 0.29 ?, 11 A MDmesh™ II Power MOSFET DPAK |
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STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 290 | 11 | 100 |
D-PAK |
| STI33N65M2 | N-канальные силовые MOSFET-транзисторы семейства MDmesh M2 на 650 В, 24 А |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 140 | 24 | 190 |
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