Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
2N7002VC | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 2 | 60 | - | - | - | - | 13500 | 0.28 | 0.15 |
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MMBF2201NT1 | Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323 | ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | 1000 | 750 | 0.3 | 0.15 |
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2N7002VA | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 2 | 60 | - | - | - | - | 13500 | 0.28 | 0.15 |
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MMBF2202PT1 | Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323 | ON Semiconductor |
MOSFET |
P | 1 | 20 | - | - | - | 2000 | 1500 | 0.3 | 0.15 |
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2N7002V | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 2 | 60 | - | - | - | - | 13500 | 0.28 | 0.15 |
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2N7002T | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 1 | 60 | - | - | - | - | 4400 | 0.115 | 0.15 |
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ZVN2120G | SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | Zetex |
MOSFET |
N | 1 | 200 | - | - | - | - | 10000 | 0.32 | 0.002 |
SOT-223-4 |
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ZVN2110G | SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | Zetex |
MOSFET |
N | 1 | 100 | - | - | - | - | 4000 | 0.5 | 0.002 |
SOT-223-4 |
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ZVN0545G | SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | Zetex |
MOSFET |
N | 1 | 450 | - | - | - | - | 50000 | 0.14 | 0.002 |
SOT-223-4 |
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STFW3N150 | N-channel 1500 V - 6 ? - 2.5 A - PowerMESH™ Power MOSFET TO-3PF | STMicroelectronics |
MOSFET |
N | 1 | 1500 | - | - | - | - | 1100 | 2.5 | 0 |
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STFW4N150 | N-channel 1500 V - 5 ? - 4 A - PowerMESH™ Power MOSFET TO-3PF | STMicroelectronics |
MOSFET |
N | 1 | 1500 | - | - | - | - | 5000 | 4 | 0 |
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STFW4N150 | N-channel 1500 V - 5 ? - 4 A - PowerMESH™ Power MOSFET TO-3PF | STMicroelectronics |
MOSFET |
N | 1 | 1500 | - | - | - | - | 5000 | 4 | 0 |
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STFW4N150 | N-channel 1500 V - 5 ? - 4 A - PowerMESH™ Power MOSFET TO-3PF | STMicroelectronics |
MOSFET |
N | 1 | 1500 | - | - | - | - | 5000 | 4 | 0 |
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STP8NM60FP | N-channel 650 V@Tjmax, 0.9 ?, 8 A MDmesh™ Power MOSFET TO-220FP | STMicroelectronics |
MOSFET |
N | 1 | 30 | - | - | - | - | 900 | 8 | 0 |
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NTZS3151P | Small Signal MOSFET ?20 V, ?950 mA, P?Channel SOT?563 | ON Semiconductor |
MOSFET |
P | 1 | -20 | 195 | - | - | 120 | - | -0.86 | -0.17 |
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NTK3142P | Small Signal MOSFET ?20 V, ?280 mA, P?Channel with ESD Protection, SOT?723 | ON Semiconductor |
MOSFET |
P | 1 | -20 | 6100 | - | - | 2900 | - | -0.26 | -0.4 |
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NTK3139P | Power MOSFET ?20 V, ?780 mA, Single P?Channel with ESD Protection, SOT?723 | ON Semiconductor |
MOSFET |
P | 1 | -20 | 700 | - | - | 380 | - | -0.78 | -0.45 |
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NTUD3171PZ | Small Signal MOSFET ?20 V, ?200 mA, Dual P?Channel, 1.0 x 1.0 mm SOT?963 Package | ON Semiconductor |
MOSFET |
P | 2 | -20 | 3400 | - | 2000 | - | - | -200 | -125 |
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MKE11R600DCGFC | Силовой N-канальный MOSFET-транзистор серии COOLMOS с режимом обогащения, сверхмалый заряд затвора | IXYS |
MOSFET |
N | 1 | 600 | 165 | 165 | 165 | 165 | 165 | 15 | - |
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IXZR18N50B | Z-MOS RF Power MOSFET | IXYS |
MOSFET |
N | 1 | 500 | - | - | - | - | 325 | 19 | - |
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