Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| FQP19N20 | 200V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 200 | - | - | - | - | 120 | 19.4 | 140 |
TO-220 |
| STD12NM50N | N-channel 500 V, 0.29 ?, 11 A MDmesh™ II Power MOSFET DPAK |
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STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 290 | 11 | 100 |
D-PAK |
| FDD5810 | N-Channel Logic Level Trench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 18 | 37 | 72 |
TO-252 |
| STI33N65M2 | N-канальные силовые MOSFET-транзисторы семейства MDmesh M2 на 650 В, 24 А |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 140 | 24 | 190 |
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| IRF2804S-7P | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 40 | - | - | - | - | 1.6 | 320 | 330 |
D2-PAK |
| PH1875L | N-канальный TrenchMOS транзистор с логическим уровнем FET |
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NXP |
MOSFET |
N | 1 | 75 | - | - | - | 14.6 | 13.3 | 45.8 | 62.5 |
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| NCV8403 | Защищенные MOSFET-транзисторы для управления вторичными цепями |
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ON Semiconductor |
MOSFET |
N | 1 | 42 | - | - | - | - | 53 | 15 | 1.56 |
SOT-223-4 |
| PHD38N02LT | N-channel TrenchMOS logic level FET |
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NXP |
MOSFET |
N | 1 | 20 | - | - | - | 13.5 | - | 44.7 | 57.6 |
D-PAK |
| Si7220DN | Dual N-Channel 60-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 60 | - | - | - | 61 | 48 | 3.4 | 1.3 |
PowerPAK_1212-8 |
| NTB18N06 | Power MOSFET 15 A, 60 V, N?Channel D2PAK |
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ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 76 | 15 | 48.4 |
D2-PAK |
| IPA60R099C6 | 600V CoolMOS™ C6 Power Transistor |
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Infineon Technologies |
MOSFET |
N | 1 | 600 | - | - | - | - | 90 | 37.9 | 35 |
TO-220F |
| IRF7313 | HEXFET Power MOSFETs Dual N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 2 | 30 | - | - | - | 46 | 29 | 6.5 | 2 |
SOIC-8 |
| STD11NM60N | N-channel 600 V - 0.37 ? - 10 A - IPAK - DPAK second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 370 | 10 | 90 |
D-PAK |
| TK40S10K3Z | Силовой N-канальный MOSFET-транзистор для автомобильных приложений |
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Toshiba |
MOSFET |
N | 1 | 100 | - | - | - | - | 18 | 40 | 93 |
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| HUF75545S3 | N-Channel, UltraFET Power MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 80 | - | - | - | - | 8.2 | 75 | 270 |
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| IRFR420A | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 3000 | 3.3 | 83 |
D-PAK |
| MGSF2N02EL | Power MOSFET 2.8 Amps, 20 Volts, N?Channel SOT?23 |
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ON Semiconductor |
MOSFET |
N | 1 | 20 | - | - | - | 78 | - | 2.8 | 1.75 |
SOT-23-3 |
| DMP3098LSD | DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
P | 2 | -30 | - | - | - | 98 | 56 | -4.4 | 1.8 |
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| IRL8113L | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 7.1 | 6 | 105 | 110 |
TO-262 |
| STD20NF20 | N-channel 200V - 0.10? -18A- DPAK Low gate charge STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 250 | - | - | - | - | 100 | 18 | 90 |
D-PAK |
