Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| NTF3055L108 | Power MOSFET 3.0 A, 60 V, Logic Level, N?Channel SOT?223 |
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ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | - | 3 | 2.1 |
SOT-223-4 |
| Si3441BDV | P-Channel 2.5-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | - | - | 98 | 70 | - | 2.45 | 0.86 |
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| TSM3443CX6 | P-канальный MOSFET транзистор, -20 В, -4.7 А |
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Taiwan Semiconductor |
MOSFET |
P | 1 | -20 | - | 100 | - | 60 | - | -4.7 | 2 |
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| DMP2066LDM | P-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | - | 29 | - | -4.6 | 1.25 |
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| Si1958DH | Dual N-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 20 | - | - | 275 | 165 | - | 1.3 | 1.25 |
SC70-6 |
| Si7485DP | P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | 10.6 | - | 7.4 | 6 | - | 12.5 | 1.8 |
PowerPAK_SO-8 |
| CSD16323Q3 | N-Channel CICLON NexFET Power MOSFETs |
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Texas Instruments |
MOSFET |
N | 1 | 25 | - | - | - | 4.4 | - | 60 | 3 |
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| NTHS5443 | Power MOSFET ?20 V, ?4.9 A, P?Channel ChipFET |
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ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | - | 56 | - | -4.9 | 2.5 |
ChipFET_1206-8 |
| ZXMN2B14FH | 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability |
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Zetex |
MOSFET |
N | 1 | 20 | 100 | - | - | 55 | - | 4.3 | 1 |
SOT-23-6 |
| IRLTS6342TRPBF | Однокристальный n-канальный МОП-транзистор с технологией HEXFET на 30В в корпусе TSOP-6 (Micro 6) |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | 22 | - | 17.5 | - | 8.3 | 2 |
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| NTB18N06L | Power MOSFET 15 Amps, 60 Volts, Logic Level N?Channel D2PAK |
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ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | - | 15 | 48.4 |
D2-PAK |
| MLD2N06CL | SMARTDISCRETES MOSFET 2 Amp, 62 Volts, Logic Level N?Channel DPAK |
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ON Semiconductor |
MOSFET |
N | 1 | 62 | - | - | - | - | - | 2 | 40 |
D-PAK |
| IRF7805 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 11 | - | 13 | 2.5 |
SOIC-8 |
| Si4933DY | Dual P-Channel 12-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 12 | 18 | - | 14 | 11.5 | - | 7.4 | 1.1 |
SOIC-8 |
| NTR3162P | Power MOSFET ?20 V, ?3.6 A, Single P?Channel, SOT?23 |
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ON Semiconductor |
MOSFET |
P | 1 | -20 | 72 | - | - | 48 | - | -2.2 | 0.48 |
SOT-23-3 |
| FDG6303N | Dual N-Channel, Digital FET |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 25 | - | - | 440 | 340 | - | 0.5 | 0.3 |
SC70-6 |
| NTE4151P | Small Signal MOSFET ?20 V, ?760 mA, Single P?Channel, Gate Zener, SC?89 |
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ON Semiconductor |
MOSFET |
P | 1 | 20 | 490 | - | - | 260 | - | 0.76 | 0.301 |
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| Si8417DB | P-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 12 | 27 | - | 21.4 | 17.4 | - | 14.5 | 6.57 |
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| TN0200K | N-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 20 | - | - | 250 | 200 | - | 0.73 | 0.35 |
SOT-23-3 |
| Si3443CDV | P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | - | - | 69.2 | 50 | - | 5.97 | 3.2 |
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