Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
STB20NM60D | N-channel 600V - 0.26? - 20A - D2PAK FDmesh™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 260 | 20 | 192 |
D2-PAK |
|
FQA28N50F | 500V N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 126 | 28.4 | 310 |
|
|
IRF7706 | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 30 | - | - | - | 36 | 22 | 7 | 1.51 |
TSSOP-8 |
|
MSAER12N50A | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Microsemi |
MOSFET |
N | 1 | 500 | - | - | - | - | 400 | 12 | 300 |
|
|
NTHS5404 | Power MOSFET 20 V, 7.2 A, N?Channel ChipFET | ON Semiconductor |
MOSFET |
N | 1 | 20 | - | - | - | - | 25 | 7.2 | 2.5 |
ChipFET_1206-8 |
|
IRFP340 | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 400 | - | - | - | - | 550 | 11 | 150 |
TO-247AC |
|
STP80NF10 | N-channel 100V - 0.012? - 80A - TO-220 Low gate charge STripFET™ II Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 12 | 80 | 300 |
TO-220 |
|
IRFZ46N | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 55 | - | - | - | - | 16.5 | 53 | 88 |
TO-220AB |
|
ZXMN2A14F | 20V N-CHANNEL ENHANCEMENT MODE MOSFET | Zetex |
MOSFET |
N | 1 | 20 | - | - | - | 60 | - | 4.1 | 1 |
SOT-23-3 |
|
STF11NM80 | N-channel 800 V - 0.35 ? - 11 A - TO-220FP MDmesh™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 800 | - | - | - | - | 350 | 11 | 35 |
|
|
IRF740 | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 400 | - | - | - | - | 550 | 10 | 125 |
TO-220AB |
|
STP95N4F3 | N-channel 40V - 5.4m? - 80A - TO-220 STripFET™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 40 | - | - | - | - | 5.4 | 80 | 110 |
TO-220 |
|
IRFB42N20D | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 200 | - | - | - | - | 55 | 44 | 300 |
TO-220AB |
|
FDP8441 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 40 | - | - | - | - | 2.1 | 80 | 300 |
TO-220AB |
|
STF19NM65N | N-channel 650 V - 0.25 ? - 15.5 A - TO-220FP second generation MDmesh™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 250 | 15.5 | 35 |
|
|
SUM110P06-07L | P-Channel 60-V (D-S) 175°C MOSFET | Vishay |
MOSFET |
P | 1 | 60 | - | - | - | 7 | 5.5 | 110 | 375 |
D2-PAK |
|
STF19NM65N | N-channel 650 V - 0.25 ? - 15.5 A - TO-220FP second generation MDmesh™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 250 | 15.5 | 35 |
|
|
FQP19N20 | 200V N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 200 | - | - | - | - | 120 | 19.4 | 140 |
TO-220 |
|
STH310N10F7-2 | N-канальный силовой транзистор MOSFET на 100 В / 180 А, выполненные по технологии STripFET™ F7 | STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 2.3 | 180 | 315 |
|
|
SiR402DP | N-Channel 30-V (D-S) MOSFET | Vishay |
MOSFET |
N | 1 | 30 | - | - | - | 6.4 | 4.8 | 50 | 36 |
PowerPAK_SO-8 |