Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IRF6100 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 95 | 65 | - | 5.1 | 1.5 |
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| DMP2066LSD | DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
P | 2 | -20 | - | - | - | 29 | - | -5.8 | 2 |
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| FDMA2002NZ | Dual N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 30 | - | - | - | 75 | - | 2.9 | 1.5 |
MicroFET |
| Si1988DH | Dual N-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 20 | 205 | - | 165 | 139 | - | 1.3 | 1.25 |
SC70-6 |
| Si1303DL | P-Channel 2.5-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | - | - | 560 | 360 | - | 0.67 | 0.29 |
SC70-3 |
| NTJD1155L | Power MOSFET 8 V, 1.3 A, High Side Load Switch with Level?Shift, P?Channel SC?88 |
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ON Semiconductor |
MOSFET |
P | 2 | 8 | 260 | - | - | 130 | - | 1.3 | 0.4 |
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| ZXMN2F30FH | 20V SOT23 N-channel enhancement mode MOSFET |
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Zetex |
MOSFET |
N | 1 | 20 | - | - | - | 45 | - | 4.9 | 1.4 |
SOT-23-3 |
| PBSM5240PF | 40 В, 2A PNP транзистор с низким VCEsat (BISS), N-каналом Trench MOSFET |
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NXP |
MOSFET PNP |
N | 1 | 30 | - | - | - | 370 | - | 0.66 | 1.25 |
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| NTP18N06L | Power MOSFET 15 Amps, 60 Volts, Logic Level N?Channel TO-220 |
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ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | - | 15 | 48.4 |
TO-220 |
| DMP3120L | P-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 120 | - | -2.8 | 1.4 |
SOT-23-3 |
| MLP1N06CL | SMARTDISCRETES MOSFET 1 Amp, 62 Volts, Logic Level N–Channel TO–220 |
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ON Semiconductor |
MOSFET |
N | 1 | 62 | - | - | - | - | - | 1 | 40 |
TO-220AB |
| Si6926ADQ | Dual N-Channel 2.5-V (G-S) MOSFET |
|
Vishay |
MOSFET |
N | 2 | 20 | 35 | - | 29 | 24 | - | 4.1 | 0.83 |
TSSOP-8 |
| IRF7805A | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 11 | - | 13 | 2.5 |
SOIC-8 |
| Si4931DY | Dual P-Channel 12-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 12 | 23 | - | 18 | 14.5 | - | 6.7 | 1.1 |
SOIC-8 |
| IRF7601 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 20 | - | - | 50 | 35 | - | 5.7 | 1.8 |
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| NTR4003N | Small Signal MOSFET 30 V, 0.56 A, Single N?Channel, SOT?23 |
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ON Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | - | - | 0.5 | 0.69 |
SOT-23-3 |
| NTA4153N | Small Signal MOSFET 20 V, 915 mA, Single N?Channel with ESD Protection, SC?75 |
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ON Semiconductor |
MOSFET |
N | 1 | 20 | 242 | - | - | 127 | - | 0.915 | 0.3 |
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| FDG332PZ | -20V P-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
P | 1 | 20 | 117 | - | 90 | 73 | - | 2.6 | 48 |
SC70-6 |
| Si7913DN | Dual P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | 51 | - | 38 | 29 | - | 5 | 1.3 |
PowerPAK_1212-8 |
| TSM3442CX6 | N-канальный MOSFET транзистор, 20 В, 4 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 20 | - | 90 | - | 70 | - | 4 | 1.25 |
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