Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IRF9640SPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 500 | 11 | 125 |
D2-PAK |
| NTHS2101P | Power MOSFET ?8.0 V, ?7.5 A P?Channel ChipFET |
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ON Semiconductor |
MOSFET |
P | 1 | -8 | 34 | - | - | 19 | - | -5.4 | 1.3 |
ChipFET_1206-8 |
| IRFR9120PBF | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 100 | - | - | - | - | 600 | 5.6 | 42 |
D-PAK |
| DMP3056LSS | SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 65 | 45 | -7.1 | 2.5 |
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| Si4621DY | P-Channel 20-V (D-S) MOSFET with Schottky Diode |
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Vishay |
MOSFET |
P | 1 | 20 | - | - | - | 73 | 42 | 6.2 | 3.1 |
SOIC-8 |
| IXTT8P50 | Силовой P-канальный MOSFET-транзистор |
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IXYS |
MOSFET |
P | 1 | -500 | 1200 | 1200 | 1200 | 1200 | 1200 | -8 | 180 |
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| IXTH36P15P | Силовой P-канальный MOSFET-транзистор |
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IXYS |
MOSFET |
P | 1 | -150 | 110 | 110 | 110 | 110 | 110 | -36 | 300 |
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| STT3PF30L | P-CHANNEL 30V - 0.14 W - 3A SOT23-6L STripFET™ II POWER MOSFET |
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STMicroelectronics |
MOSFET |
P | 1 | 20 | - | - | - | 160 | 140 | 2.4 | 1.6 |
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| NTR0202PL | Power MOSFET ?20 V, ?400 mA, P?Channel SOT?23 Package |
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ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | - | 800 | 550 | -0.4 | 0.225 |
SOT-23-3 |
| SUD50P04-40P | P-Channel 40-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 40 | - | - | - | 36 | 30 | 8 | 24 |
D-PAK |
| TSM2301CX | P-канальный MOSFET транзистор, -20 В, -2.8 А |
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Taiwan Semiconductor |
MOSFET |
P | 1 | -20 | - | 190 | - | 130 | - | -2.8 | 0.9 |
SOT-23-3 |
| TJ60S06M3L | Силовой P-канальный MOSFET-транзистор |
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Toshiba |
MOSFET |
P | 1 | -60 | - | - | - | - | 11.2 | -60 | 100 |
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| MTP50P03HDL | Power MOSFET 50 Amps, 30 Volts, Logic Level P?Channel TO?220 |
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ON Semiconductor |
MOSFET |
P | 1 | 30 | - | - | - | - | - | 50 | 125 |
TO-220AB |
| ZVP2120A | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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Zetex |
MOSFET |
P | 1 | -200 | - | - | - | - | 25000 | -0.12 | 0.7 |
TO-92 |
| Si4831BDY | P-Channel 30-V (D-S) MOSFET with Schottky Diode |
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Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 52 | 34 | 6.6 | 3.3 |
SOIC-8 |
| IRLIB9343 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 55 | - | - | - | 170 | 105 | 14 | 33 |
TO-220F |
| IRF9Z24N | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 55 | - | - | - | - | 175 | 12 | 45 |
TO-220AB |
| IRFD9220 | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 1500 | 0.56 | 1 |
HEXDIP |
| NTLJD3115P | Power MOSFET ?20 V, ?4.1 A, Cool Dual P?Channel, 2x2 mm WDFN Package |
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ON Semiconductor |
MOSFET |
P | 2 | -20 | 150 | - | - | 75 | - | -3.3 | 1.5 |
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| Si1307EDL | P-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 12 | 480 | - | 350 | 240 | - | 0.85 | 0.29 |
SC70-3 |
