Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| STD110NH02L | N-channel 24V - 0.0044? - 80A - DPAK STripFET™ III Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 24 | - | - | - | - | 4.4 | 80 | 125 |
D-PAK |
| STP19NM65N | N-channel 650 V - 0.25 ? - 15.5 A - TO-220 second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 250 | 15.5 | 150 |
TO-220 |
| HUF75345G3 | N-Channel UltraFET Power MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 55 | - | - | - | - | 7 | 75 | 325 |
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| IRF9Z14 | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 60 | - | - | - | - | 500 | 6.7 | 43 |
TO-220AB |
| NTF2955 | Power MOSFET ?60 V, ?2.6 A, Single P?Channel SOT?223 |
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ON Semiconductor |
MOSFET |
P | 1 | -60 | - | - | - | - | 145 | -2.6 | 2.3 |
SOT-223-4 |
| ZVP4424G | SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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Zetex |
MOSFET |
P | 1 | -240 | - | - | - | - | 7100 | -0.48 | 2.5 |
SOT-223-4 |
| STI15NM60ND | N-channel 600 V - 0.27 ? - 14 A - FDmesh™ II Power MOSFET I?PAK |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 270 | 14 | 125 |
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| IRFI840GLCPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 850 | 4.5 | 40 |
TO-220F |
| IRFP17N50L | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 280 | 16 | 220 |
TO-247AC |
| STP6NK90Z | N-channel 900V - 1.56? - 5.8A - TO-220 Zener-protected SuperMESH™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 900 | - | - | - | - | 1560 | 5.8 | 140 |
TO-220 |
| STP40NF10L | N-channel 100V - 0.028? - 40A TO-220 Low gate charge STripFET™ II Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 28 | 40 | 150 |
TO-220 |
| IRFU4105Z | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 55 | - | - | - | - | 24.5 | 30 | 48 |
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| IRF634S | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 250 | - | - | - | - | 450 | 8.1 | 74 |
D2-PAK |
| STF12NM60N | N-channel 600V - 0.35? - 10A - TO-220FP Second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 350 | 10 | 25 |
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| STB300NH02L | N-channel 24V - 120A - D2PAK STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 24 | - | - | - | - | 2.1 | 120 | 300 |
D2-PAK |
| STP8NM60N | N-channel 600 V - 0.56 ? - 7 A - TO-220 second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 560 | 7 | 70 |
TO-220 |
| STN1NK60Z | N-channel 600V - 13? - 0.8A - SOT-223 Zener-Protected SuperMESH™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 13000 | 0.3 | 3.3 |
SOT-223-4 |
| FDS3590 | 80V N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 80 | - | - | - | - | 32 | 6.5 | 2.5 |
SOIC-8 |
| IPP015N04NG | Силовой MOSFET транзистор семейства OptiMOS 3 |
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Infineon Technologies |
MOSFET |
N | 1 | 40 | - | - | - | - | 1.5 | 120 | 250 |
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| BSC060N10NS3 | Силовой MOSFET-транзистор серии OptiMOS™3, 100 В, 90 А, 6.0 мОм |
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Infineon Technologies |
MOSFET |
N | 1 | 100 | - | - | - | - | 6 | 90 | 125 |
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