Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
FDMC86139P | P-канальный MOSFET-транзистор с напряжением сток-исток -100 В, выполненный по технологии PowerTrench® | Fairchild Semiconductor |
MOSFET |
P | 1 | -100 | - | - | - | - | 67 | -15 | 40 |
|
|
IRF5210S | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 100 | - | - | - | - | 60 | 38 | 3.8 |
D2-PAK |
|
IRF9520PBF | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 100 | - | - | - | - | 600 | 6.8 | 60 |
TO-220AB |
|
Si5499DC | P-Channel 1.5V (G-S) MOSFET | Vishay |
MOSFET |
P | 1 | 8 | 46 | - | 37 | 30 | - | 6 | 6.2 |
ChipFET_1206-8 |
|
IRF7604 | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 130 | 90 | - | 3.6 | 1.8 |
|
|
DMP2022LSS | SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | - | 11 | 8 | -10 | 2.5 |
|
|
IRFI9634GPBF | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 250 | - | - | - | - | 1000 | 4.1 | 35 |
TO-220F |
|
Si1031X | P-Channel 1.8-V (G-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | 15000 | - | 12000 | 8000 | - | 0.155 | 0.3 |
SC89-3 |
|
IRF7506 | HEXFET Power MOSFETs Dual P-Channel | International Rectifier (IRF) |
MOSFET |
P | 2 | 30 | - | - | - | 450 | 270 | 1.7 | 1.25 |
|
|
ZXMP6A17G | 60V P-CHANNEL ENHANCEMENT MODE MOSFET | Zetex |
MOSFET |
P | 1 | -60 | - | - | - | 190 | 125 | -4.1 | 2 |
SOT-223-4 |
|
IRF7433 | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 12 | - | - | - | 24 | - | 8.9 | 2.5 |
SOIC-8 |
|
DMP2066LDM | P-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | - | 29 | - | -4.6 | 1.25 |
|
|
IRFI9640G | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 500 | 6.1 | 40 |
TO-220F |
|
Si1013X | P-Channel 1.8-V (G-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | 1800 | - | 1200 | 800 | - | 0.35 | 0.25 |
SC89-3 |
|
IRF7504 | HEXFET Power MOSFETs Dual P-Channel | International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 400 | 270 | - | 1.7 | 1.25 |
|
|
ZXMP7A17G | 70V P-channel enhancement mode MOSFET | Zetex |
MOSFET |
P | 1 | -70 | - | - | - | 250 | 160 | -3.7 | 2 |
SOT-223-4 |
|
Si6423DQ | P-Channel 12-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 12 | 11.2 | - | 8.5 | 6.8 | - | 8.2 | 1.05 |
TSSOP-8 |
|
IXTA24P085T | Силовой P-канальный MOSFET-транзистор | IXYS |
MOSFET |
P | 1 | -85 | 65 | 65 | 65 | 65 | 65 | -24 | 83 |
|
|
Si1071X | P-Channel 30-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 30 | - | - | 195 | 147 | 139 | 0.96 | 0.236 |
SC89-6 |
|
SI3443DV | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 90 | 65 | - | 4.4 | 2 |
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