Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| STB24NM65N | N-channel 650 V - 0.16 ? - 19 A - D2PAK second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 160 | 19 | 160 |
D2-PAK |
| FCD2250N80Z | N-канальный MOSFET-транзистор семейства SuperFET® II, 800 В, 2.6 А |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 800 | - | - | - | - | 0.00225 | 2.6 | 39 |
D-PAK |
| PHD9NQ20T | N-канальный TrenchMOS™ транзистор |
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NXP |
MOSFET |
N | 1 | 200 | - | - | - | - | 300 | 8.7 | 88 |
D-PAK |
| IRF3415 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 150 | - | - | - | - | 42 | 43 | 200 |
TO-220AB |
| FDPF52N20T | N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 200 | - | - | - | - | 41 | 52 | 38.5 |
TO-220F |
| STB19NM65N | N-channel 650 V - 0.25 ? - 15.5 A - D2PAK second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 250 | 15.5 | 150 |
D2-PAK |
| SUD35N10-26P | N-Channel 100-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 100 | - | - | - | - | 21 | 35 | 83 |
D-PAK |
| STD3NK60Z | N-CHANNEL 600V - 3.3W - 2.4A DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 3300 | 2.4 | 45 |
D-PAK |
| HUF75639G3 | N-Channel UltraFET Power MOSFETs |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 21 | 56 | 200 |
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| IPD50R280CE | 500В силовой транзистор серии CoolMOS™ CE |
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Infineon Technologies |
MOSFET |
N | 1 | 500 | - | - | - | - | 280 | 42.9 | 92 |
TO-252 |
| IPD60R600C6 | 600V CoolMOS™ C6 Power Transistor |
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Infineon Technologies |
MOSFET |
N | 1 | 600 | - | - | - | - | 540 | 7.3 | 63 |
TO-252 |
| IRFZ48S | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 60 | - | - | - | - | 18 | 50 | 190 |
D2-PAK |
| STP20NF20 | N-channel 200V - 0.10? -18A- TO-220 Low gate charge STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 200 | - | - | - | - | 100 | 18 | 90 |
TO-220 |
| IRFD224 | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 250 | - | - | - | - | 1100 | 0.63 | 1 |
HEXDIP |
| STD10NF10 | N-channel 100V - 0.115? - 13A - DPAK - IPAK Low gate charge STripFET™ II Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 115 | 13 | 50 |
D-PAK |
| IRFS23N20D | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 200 | - | - | - | - | 100 | 24 | 170 |
D2-PAK |
| STP11NM80 | N-channel 800 V - 0.35 ? - 11 A - TO-220 MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 800 | - | - | - | - | 350 | 11 | 150 |
TO-220 |
| FDB3502 | 75V N-Channel Power Trench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 75 | - | - | - | - | 37 | 6 | 3.1 |
D2-PAK |
| STD110NH02L | N-channel 24V - 0.0044? - 80A - DPAK STripFET™ III Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 24 | - | - | - | - | 4.4 | 80 | 125 |
D-PAK |
| FQP90N10V2 | 100V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 8.5 | 90 | 250 |
TO-220 |
