Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| Si5903DC | Dual P-Channel 2.5-V (G-S) Rated MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | - | - | 215 | 130 | - | 2.1 | 1.1 |
ChipFET_1206-8 |
| TSM3900DCX6 | Сдвоенный N-канальный MOSFET транзистор, 20 В, 2 А |
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Taiwan Semiconductor |
MOSFET |
N | 2 | 20 | 110 | 70 | - | 55 | - | 2 | 2 |
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| Si4914BDY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
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Vishay |
MOSFET |
N | 2 | 30 | - | - | - | 20 | 15.5 | 8 | 3.1 |
SOIC-8 |
| Si1553DL | Complementary 2.5-V (G-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 20 | - | - | 1.4 | 850 | - | 0.41 | 0.27 |
SC70-6 |
| FDW9926A | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 24 | - | 4.5 | 1 |
TSSOP-8 |
| IRF9956 | HEXFET Power MOSFETs Dual N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 2 | 30 | - | - | - | 200 | 100 | 3.5 | 2 |
SOIC-8 |
| Si3900DV | Dual N-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 20 | - | - | 160 | 100 | - | 2 | 0.83 |
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| Si1903DL | Dual P-Channel 2.5-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | - | - | 1400 | 850 | - | 0.41 | 0.27 |
SC70-6 |
| Si4330DY | Dual N-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 30 | - | - | - | 18 | 13 | 6.6 | 1.1 |
SOIC-8 |
| FDC6321C | Dual N & P Channel, Digital FET |
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Fairchild Semiconductor |
N+P |
N, P | 2 | 25 | - | - | 440 | 330 | - | 1 | 0.9 |
SSOT-6 |
| IRF5852 | HEXFET Power MOSFETs Dual N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 2 | 20 | - | - | 120 | 90 | - | 2.7 | 0.96 |
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| MMDF2N02E | Power MOSFET 2 Amps, 25 Volts N?Channel SO?8, Dual |
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ON Semiconductor |
MOSFET |
N | 2 | 25 | - | - | - | 110 | 83 | 3.6 | 2 |
SOIC-8 |
| Si5933DC | Dual P-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | 205 | - | 137 | 95 | - | 2.7 | 1.1 |
ChipFET_1206-8 |
| Si7236DP | Dual N-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 20 | - | - | 5.6 | 42 | - | 60 | 46 |
PowerPAK_SO-8 |
| TSM2611EDCX6 | Сдвоенный N-канальный MOSFET транзистор, 20 В, 6 А, ESD защита |
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Taiwan Semiconductor |
MOSFET |
N | 2 | 20 | - | 28 | - | 20 | - | 6 | 0.83 |
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| STL25DN10F7 | Сдвоенный N-канальный силовой транзистор MOSFET семейства STripFET™ VII DeepGATE™, 100 В, 5 А |
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STMicroelectronics |
MOSFET |
N | 2 | 100 | - | - | - | - | 80 | 5 | 60 |
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| Si7922DN | Dual N-Channel 100-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 2 | 100 | - | - | - | - | 162 | 1.8 | 1.3 |
PowerPAK_1212-8 |
| DMN32D2LDF | COMMON SOURCE DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 2 | 30 | 2200 | - | - | - | - | 0.4 | 0.28 |
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| FDS6898AZ | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 10 | - | 9.4 | 2 |
SOIC-8 |
| NTGD4161P | Power MOSFET ?30 V, ?2.3 A, Dual P?Channel, TSOP?6 |
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ON Semiconductor |
MOSFET |
P | 2 | -20 | - | - | - | 190 | 105 | -2.1 | 1.1 |
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