Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| STP8NM60N | N-channel 600 V - 0.56 ? - 7 A - TO-220 second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 560 | 7 | 70 |
TO-220 |
| TSM3401CX | P-канальный MOSFET транзистор, -30 В, -3 А |
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Taiwan Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 90 | 60 | -3 | 1.25 |
SOT-23-3 |
| FDS8949 | Dual N-Channel Logic Level PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 2 | 40 | - | - | - | 26 | 21 | 6 | 1.6 |
SOIC-8 |
| STN1NK60Z | N-channel 600V - 13? - 0.8A - SOT-223 Zener-Protected SuperMESH™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 13000 | 0.3 | 3.3 |
SOT-223-4 |
| FDS3590 | 80V N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 80 | - | - | - | - | 32 | 6.5 | 2.5 |
SOIC-8 |
| IPP015N04NG | Силовой MOSFET транзистор семейства OptiMOS 3 |
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Infineon Technologies |
MOSFET |
N | 1 | 40 | - | - | - | - | 1.5 | 120 | 250 |
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| IRF1312 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 80 | - | - | - | - | 10 | 95 | 210 |
TO-220AB |
| PHB191NQ06LT | N-channel Trenchmos (tm) logic level FET |
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NXP |
MOSFET |
N | 1 | 55 | - | - | - | 3.5 | 3.1 | 75 | 300 |
D2-PAK |
| BSC060N10NS3 | Силовой MOSFET-транзистор серии OptiMOS™3, 100 В, 90 А, 6.0 мОм |
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Infineon Technologies |
MOSFET |
N | 1 | 100 | - | - | - | - | 6 | 90 | 125 |
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| PH3120L | N-channel TrenchMOS(tm) logic level FET |
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NXP |
MOSFET |
N | 1 | 20 | - | - | - | 3 | 2.25 | 100 | 62.5 |
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| 2N7002E | N-Channel 60-V MOSFET |
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Vishay |
MOSFET |
N | 1 | 60 | - | - | - | 1800 | 1200 | 0.24 | 0.35 |
SOT-23-3 |
| NTMFS4833N | Power MOSFET 30 V, 191 A, Single N?Channel, SO?8 FL |
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ON Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 2.3 | 1.3 | 26 | 2.35 |
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| IRF6717 | Single N-Channel HEXFET Power MOSFET in a DirectFET MX package |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 25 | - | - | - | 1.6 | 0.95 | 38 | 2.8 |
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| IRF5806 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 147 | 86 | - | 4 | 2 |
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| STP4NK60ZFP | N-channel 600 V - 1.76 ? - 4 A SuperMESH™ Power MOSFET TO-220FP |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 176 | 4 | 25 |
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| FDP8874 | N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 4.5 | 3.6 | 114 | 110 |
TO-220AB |
| IRFPS30N60KPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 160 | 30 | 450 |
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| NTB5412N | Power MOSFET 60 Amps, 60 Volts N-Channel D2PAK |
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ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 11.1 | 60 | 125 |
D2-PAK |
| DMP2012SN | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | - | 230 | - | -0.7 | 0.5 |
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| IRL3714L | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 20 | - | - | - | 28 | 20 | 36 | 43 |
TO-262 |
