Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| TK4P60DA | N Channel MOS Type (π-MOSⅦ) |
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Toshiba |
MOSFET |
N | 1 | 600 | - | - | - | - | 2200 | 3.5 | 80 |
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| IRL7833S | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 4.5 | 3.8 | 150 | 140 |
D2-PAK |
| STB80NF55L-08 | N-CHANNEL 55V - 0.0065? - 80A - D2PAK/I2PAK STripFET™ II POWER MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 55 | - | - | - | - | 6.5 | 80 | 300 |
D2-PAK |
| TSM40N03PQ33 | Силовой N-канальный MOSFET транзистор, 30 В, 40 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 5.9 | 4.6 | 40 | 52 |
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| FQB30N06L | 60V LOGIC N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 27 | 32 | 3.75 |
D2-PAK |
| STW20NM60FD | N-channel 600V - 0.26? - 20A - TO-247 FDmesh™ Power MOSFET (with fast diode) |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 260 | 20 | 214 |
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| IRFP048PBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 60 | - | - | - | - | 18 | 70 | 190 |
TO-247AC |
| SiE726DF | N-Channel 30-V (D-S) MOSFET with Schottky Diode |
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Vishay |
MOSFET |
N | 1 | 30 | - | - | - | 2.6 | 2 | 60 | 125 |
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| IPD60R380C6 | 600V CoolMOS™ C6 Power Transistor |
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Infineon Technologies |
MOSFET |
N | 1 | 600 | - | - | - | - | 340 | 10.6 | 83 |
TO-252 |
| IRFR3910 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | - | 115 | 16 | 52 |
D-PAK |
| STU70N2LH5 | N-channel 25 V, 0.006 ?, 48 A - IPAK STripFET™ V Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 25 | - | - | - | - | 6.4 | 43 | 60 |
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| FCA47N60 | 600V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 58 | 47 | 417 |
TO-3PN |
| STW19NM65N | N-channel 650 V - 0.25 ? - 15.5 A - TO-247 second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 250 | 15.5 | 150 |
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| IRF710PBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 400 | - | - | - | - | 3600 | 2 | 36 |
TO-220AB |
| IXTP80N10T | N-канальный силовой TrenchMV MOSFET транзистор |
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IXYS |
MOSFET |
N | 1 | 100 | 14 | 14 | 14 | 14 | 14 | 80 | 230 |
TO-220 |
| IXFK90N20Q | N-канальный силовой MOSFET транзистор со встроенным быстрым диодом (HiPerFET) |
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IXYS |
MOSFET |
N | 1 | 200 | 22 | 22 | 22 | 22 | 22 | 90 | 500 |
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| STY100NS20FD | N-channel 200V - 0.022? - 100A - Max247 MESH OVERLAY™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 200 | - | - | - | - | 22 | 100 | 450 |
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| SiHA21N60EF | N-канальный MOSFET-транзистор с быстродействующим паразитным диодом |
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Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 176 | 21 | 36 |
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| FQA8N80C_F109 | 800V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 800 | - | - | - | - | 1290 | 8.4 | 220 |
TO-3PN |
| NTB65N02R | Power MOSFET 65 A, 24 V N-Channel D2PAK |
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ON Semiconductor |
MOSFET |
N | 1 | 25 | - | - | - | - | - | 65 | 62.5 |
D2-PAK |
