Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
DMP2066LSS | SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | - | 40 | - | -6.5 | 2.5 |
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DMP2004K | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 1 | -20 | 1700 | - | - | 700 | - | -6.6 | 0.55 |
SOT-23-3 |
|
ZXMP3A16N8 | 30V P-CHANNEL ENHANCEMENT MODE MOSFET | Zetex |
MOSFET |
P | 1 | -30 | - | - | - | 70 | 40 | -6.7 | 1.9 |
SOIC-8 |
|
FDD4243 | 40V P-Channel PowerTrench® MOSFET | Fairchild Semiconductor |
MOSFET |
P | 1 | -40 | - | - | - | 64 | 44 | -6.7 | 42 |
D-PAK |
|
DMP3056LSD | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 2 | -30 | - | - | - | 65 | 45 | -6.9 | 2.5 |
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IRLTS2242TRPBF | Однокристальный p-канальный МОП-транзистор с технологией HEXFET на 20В в корпусе TSOP-6 (Micro 6) | International Rectifier (IRF) |
MOSFET |
P | 1 | -20 | - | 55 | - | 32 | - | -6.9 | 2 |
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NTMS5P02R2 | Power MOSFET ?5.4 Amps, ?20 Volts P?Channel Enhancement?Mode Single SOIC?8 Package | ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | - | 26 | - | -7.05 | 2.5 |
SOIC-8 |
|
DMP3056LSS | SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 65 | 45 | -7.1 | 2.5 |
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TSM4925DCS | Сдвоенный P-канальный MOSFET транзистор, -30 В, -7.1 А | Taiwan Semiconductor |
MOSFET |
P | 2 | -30 | - | - | - | 41 | 25 | -7.1 | 2 |
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ZXMP3F37DN8 | 30V SO8 Dual P-channel enhancement mode MOSFET | Zetex |
MOSFET |
P | 2 | -30 | - | - | - | 41 | 25 | -7.3 | 1.25 |
SOIC-8 |
|
NTMS4176P | Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8 | ON Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 23 | 14 | -7.3 | 1.44 |
SOIC-8 |
|
ZXMP3A16G | 30V P-CHANNEL ENHANCEMENT MODE MOSFET | Zetex |
MOSFET |
P | 1 | -30 | - | - | - | 70 | 45 | -7.5 | 2 |
SOT-223-4 |
|
NTMD6P02R2 | Power MOSFET 6 Amps, 20 Volts P?Channel SOIC?8, Dual | ON Semiconductor |
MOSFET |
P | 2 | -20 | - | - | - | 27 | - | -7.8 | 2 |
SOIC-8 |
|
ZXM66P03N8 | 30V P-CHANNEL ENHANCEMENT MODE MOSFET | Zetex |
MOSFET |
P | 1 | -30 | - | - | - | 35 | 25 | -7.9 | 1.56 |
SOIC-8 |
|
TJ8S06M3L | Силовой P-канальный MOSFET-транзистор | Toshiba |
MOSFET |
P | 1 | -60 | - | - | - | - | 104 | -8 | 27 |
|
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ZXM66P02N8 | 20V P-CHANNEL ENHANCEMENT MODE MOSFET | Zetex |
MOSFET |
P | 1 | -20 | - | - | - | 25 | - | -8 | 1.56 |
SOIC-8 |
|
FDME910PZT | P-канальные MOSFET-транзисторы PowerTrench® -20В, -8А | Fairchild Semiconductor |
MOSFET |
P | 1 | -20 | 45 | 31 | - | 24 | - | -8 | 2.1 |
MicroFET |
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IXTT8P50 | Силовой P-канальный MOSFET-транзистор | IXYS |
MOSFET |
P | 1 | -500 | 1200 | 1200 | 1200 | 1200 | 1200 | -8 | 180 |
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IXTH8P50 | Силовой P-канальный MOSFET-транзистор | IXYS |
MOSFET |
P | 1 | -500 | 1200 | 1200 | 1200 | 1200 | 1200 | -8 | 180 |
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SQJ941EP | Automotive Dual P-Channel 30 V (D-S) 175 °C MOSFET | Vishay |
MOSFET |
P | 2 | -30 | - | - | - | 39 | 24 | -8 | 55 |
PowerPAK_SO-8 |