Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| Si3983DV | Dual P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | 170 | - | 116 | 86 | - | 2.1 | 0.83 |
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| IRFTS9342TRPBF | Однокристальный p-канальный МОП-транзистор с технологией HEXFET на 30В в корпусе TSOP-6 (Micro 6) |
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International Rectifier (IRF) |
MOSFET |
P | 1 | -30 | - | - | - | 66 | 40 | -5.8 | 2 |
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| NTGS1135P | Power MOSFET ?8 V, ?5.8 A, Single P?Channel, TSOP?6 |
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ON Semiconductor |
MOSFET |
P | 1 | -8 | 37 | - | - | 22 | - | -4.6 | 0.97 |
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| Si3867DV | P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | - | - | 81 | 41 | - | 3.9 | 1.1 |
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| Si3590DV | N- and P-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
N+P | 2 | 30 | - | - | 235 | 135 | - | 1.7 | 0.83 |
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| Si3483CDV | P-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 44 | 27 | 8 | 4.2 |
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| NTGD4161P | Power MOSFET ?30 V, ?2.3 A, Dual P?Channel, TSOP?6 |
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ON Semiconductor |
MOSFET |
P | 2 | -20 | - | - | - | 190 | 105 | -2.1 | 1.1 |
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| IRF5852 | HEXFET Power MOSFETs Dual N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 2 | 20 | - | - | 120 | 90 | - | 2.7 | 0.96 |
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| Si3471CDV | P-Channel 12-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 12 | 35 | - | 27 | 21 | - | 8 | 3.8 |
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| Si3812DV | N-Channel 20-V (D-S) MOSFET with Schottky Diode |
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Vishay |
MOSFET |
N | 1 | 20 | - | - | 160 | 100 | - | 2 | 0.83 |
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| Si3456BDV | N-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 30 | - | - | - | 41 | 28 | 4.5 | 1.1 |
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| IRF5805 | HEXFET Power MOSFETs Discrete P-Channel |
|
International Rectifier (IRF) |
MOSFET |
P | 1 | 30 | - | - | - | 165 | 98 | 3.8 | 2 |
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| NTGS3446 | Power MOSFET 20 V, 5.1 A Single N?Channel, TSOP6 |
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ON Semiconductor |
MOSFET |
N | 1 | 20 | - | - | - | 36 | - | 2.5 | 0.5 |
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| IRLMS5703 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 30 | - | - | - | 400 | 180 | 2.4 | 1.7 |
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| Si3951DV | Dual P-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 2 | 20 | - | - | 164 | 92 | - | 2.7 | 2 |
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| IRLTS2242TRPBF | Однокристальный p-канальный МОП-транзистор с технологией HEXFET на 20В в корпусе TSOP-6 (Micro 6) |
|
International Rectifier (IRF) |
MOSFET |
P | 1 | -20 | - | 55 | - | 32 | - | -6.9 | 2 |
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| NTGS5120P | Power MOSFET ?60 V, ?2.9 A, Single P?Channel, TSOP?6 |
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ON Semiconductor |
MOSFET |
P | 1 | -60 | - | - | - | 88 | 72 | -2.5 | 1.1 |
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| Si3443CDV | P-Channel 20-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 20 | - | - | 69.2 | 50 | - | 5.97 | 3.2 |
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| Si3457CDV | P-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 92 | 60 | 5.1 | 3 |
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| NTGS3130N | Power MOSFET 20 V, 5.6 A Single N-Channel, TSOP-6 |
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ON Semiconductor |
MOSFET |
N | 1 | 20 | - | - | - | 19 | - | 5.6 | 1.1 |
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