Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
IRF6622 | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 25 | - | - | - | 8.9 | 6.3 | 15 | 34 |
|
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FDP13AN06A0 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 11.5 | 62 | 115 |
TO-220AB |
|
STD5NK50Z | N-CHANNEL 500V - 1.22? - 4.4A D/IPAK Zener-Protected SuperMESH™MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 1220 | 4.4 | 70 |
D-PAK |
|
NVMFS5C604NL | N-канальный MOSFET-транзистор поколения Trench 6 с напряжением сток-исток 60 В | ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | 1.7 | 1.2 | 287 | 200 |
|
|
Si8901EDB | Bi-Directional P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | 81 | - | 62 | 48 | - | 3.5 | 1 |
|
|
STI19NM65N | N-channel 650 V - 0.25 ? - 15.5 A - I2PAK second generation MDmesh™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 250 | 15.5 | 150 |
|
|
HUF75652G3 | N-Channel UltraFET Power MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 6.7 | 75 | 515 |
|
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TSM3400CX | N-канальный MOSFET транзистор, 30 В, 5.8 А | Taiwan Semiconductor |
MOSFET |
N | 1 | 30 | - | 52 | - | 33 | 28 | 5.8 | 1.4 |
SOT-23-3 |
|
SiE820DF | N-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
N | 1 | 20 | - | - | 5.3 | 2.9 | - | 50 | 104 |
|
|
NTD5805N | Power MOSFET 40V 51A 9.5 mOhm Single N-Channel DPAK | ON Semiconductor |
MOSFET |
N | 1 | 40 | - | - | - | 10.9 | 7.6 | 51 | 47 |
D-PAK |
|
IXTP8N50PM | Стандартный N-канальный силовой MOSFET | IXYS |
MOSFET |
N | 1 | 500 | 800 | 800 | 800 | 800 | 800 | 4 | 41 |
|
|
IRF9Z10 | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 60 | - | - | - | - | 500 | 6.7 | 43 |
TO-220AB |
|
STF15NM60N | N-channel 600V - 0.270? - 14A - TO-220FP Second generation MDmesh™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 270 | 14 | 30 |
|
|
IXTA6N100D2 | N-канальный силовой MOSFET транзистор с режимом истощения | IXYS |
MOSFET |
N | 1 | 1000 | 2200 | 2200 | 2200 | 2200 | 2200 | 6 | 300 |
|
|
IRFI840GLC | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 850 | 4.5 | 40 |
TO-220F |
|
ZVP2120G | SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | Zetex |
MOSFET |
P | 1 | -200 | - | - | - | - | 25000 | -0.2 | 2 |
SOT-223-4 |
|
NTE4153N | Small Signal MOSFET 20 V, 915 mA, Single N?Channel with ESD Protection, SC?89 | ON Semiconductor |
MOSFET |
N | 1 | 20 | 242 | - | - | 127 | - | 915 | 300 |
|
|
IRFP15N60LPBF | HEXFET® Power MOSFET | Vishay |
MOSFET |
n | 1 | 600 | - | - | - | - | 385 | 15 | 280 |
TO-247AC |
|
STP40NF10 | N-channel 100V - 0.025? - 50A TO-220 Low gate charge STripFET™ II Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 25 | 50 | 150 |
TO-220 |
|
IXTP42N15T | N-канальный силовой TrenchMV MOSFET транзистор | IXYS |
MOSFET |
N | 1 | 100 | 45 | 45 | 45 | 45 | 45 | 42 | 200 |
TO-220 |