Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
| Si1305EDL | P-Channel 1.8-V (G-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 8 | 440 | - | 315 | 230 | - | 0.86 | 0.29 |
SC70-3 |
| ZXMP3A17DN8 | DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET |
|
Zetex |
MOSFET |
P | 2 | -30 | - | - | - | 110 | 70 | -4.4 | 1.25 |
SOIC-8 |
| Si3473DV | P-Channel 12-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 12 | 33 | - | 24 | 19 | - | 5.9 | 1.1 |
|
| IXTR170P10P | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -100 | 13 | 13 | 13 | 13 | 13 | -108 | 312 |
|
| Si7461DP | P-Channel 60-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 60 | - | - | - | 15 | 11.5 | 8.6 | 1.9 |
PowerPAK_SO-8 |
| TSM6981DCA | Сдвоенный P-канальный MOSFET транзистор, -20 В, -5 А |
|
Taiwan Semiconductor |
MOSFET |
P | 2 | -20 | 60 | 50 | - | 40 | - | -5 | 1.14 |
TSSOP-8 |
| NTD20P06L | Power MOSFET ?60 V, ?15.5 A, Single P?Channel, DPAK |
|
ON Semiconductor |
MOSFET |
P | 1 | -60 | - | - | - | - | 11000 | -15.5 | 65 |
D-PAK |
| NTB5605 | Power MOSFET -60 Volt, -18.5 Amp P-Channel, D2PAK |
|
ON Semiconductor |
MOSFET |
P | 1 | -60 | - | - | - | - | - | -18.5 | 88 |
D2-PAK |
| IRF7706 | HEXFET Power MOSFETs Discrete P-Channel |
|
International Rectifier (IRF) |
MOSFET |
P | 1 | 30 | - | - | - | 36 | 22 | 7 | 1.51 |
TSSOP-8 |
| IRF9610PBF | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 3000 | 1.8 | 20 |
TO-220AB |
| NTGS3441P | Power MOSFET ?20 V, ?3.16 A, Single P?Channel TSOP?6 |
|
ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | 144 | 91 | - | -2.5 | 0.98 |
|
| Si8901EDB | Bi-Directional P-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 20 | 81 | - | 62 | 48 | - | 3.5 | 1 |
|
| IRF5806 | HEXFET Power MOSFETs Discrete P-Channel |
|
International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 147 | 86 | - | 4 | 2 |
|
| IRFL9110 | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 100 | - | - | - | - | 1200 | 1.1 | 3.1 |
SOT-223-4 |
| DMP2160UFDB | DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
|
Diodes Incorporated |
MOSFET |
P | 2 | -20 | 86 | - | - | 54 | - | -3.8 | 1.4 |
|
| Si4943CDY | Dual P-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 2 | 20 | - | - | - | 27.5 | 16 | 8 | 3.1 |
SOIC-8 |
| IXTA10P50P | PolarP Power MOSFET |
|
IXYS |
MOSFET |
P | 1 | -500 | - | - | - | - | 1000 | -10 | 300 |
|
| STN5PF02V | P-channel 20V - 0.065? - 4.2A - SOT-223 2.5V - Drive STripFET™ II Power MOSFET |
|
STMicroelectronics |
MOSFET |
P | 1 | 20 | - | - | - | - | 65 | 4.2 | 2.5 |
SOT-223-4 |
| IRF7314 | HEXFET Power MOSFETs Dual P-Channel |
|
International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 98 | 58 | - | 5.3 | 2 |
SOIC-8 |
| ZXMP6A17DN8 | DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET |
|
Zetex |
MOSFET |
P | 2 | -60 | - | - | - | 190 | 125 | -3.2 | 1.25 |
SOIC-8 |
