Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
TSM3433CX6 | P-канальный MOSFET транзистор, -20 В, -5.6 А | Taiwan Semiconductor |
MOSFET |
P | 1 | -20 | 80 | 57 | - | 42 | - | -5.6 | 2 |
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Si1912EDH | N-Channel 20-V (D-S) MOSFET with Copper Leadframe | Vishay |
MOSFET |
N | 2 | 20 | 344 | - | 281 | 220 | - | 1.13 | 0.57 |
SC70-6 |
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FQPF9N50C | 500V N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | 650 | - | 9 | 44 |
TO-220F |
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Si7540DP | N- and P-Channel 12-V (D-S) MOSFET | Vishay |
MOSFET |
N+P | 2 | 12 | - | - | 43 | 26 | - | 5.7 | 1.4 |
PowerPAK_SO-8 |
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CSD16321Q5 | N-Channel CICLON NexFET Power MOSFETs | Texas Instruments |
MOSFET |
N | 1 | 25 | - | - | - | 2.1 | - | 100 | 3.1 |
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NTHS5441 | Power MOSFET ?20 V, ?5.3 A, P?Channel ChipFET | ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | - | 46 | - | -5.3 | 2.5 |
ChipFET_1206-8 |
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ZXMN2B03E6 | 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability | Zetex |
MOSFET |
N | 1 | 20 | 75 | - | - | 40 | - | 5.4 | 1.1 |
SOT-23-6 |
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IRF7311 | HEXFET Power MOSFETs Dual N-Channel | International Rectifier (IRF) |
MOSFET |
N | 2 | 20 | - | - | 46 | 29 | - | 6.6 | 2 |
SOIC-8 |
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MLD1N06CL | SMARTDISCRETES MOSFET 1 Amp, 62 Volts, Logic Level N?Channel DPAK | ON Semiconductor |
MOSFET |
N | 1 | 62 | - | - | - | - | - | 1 | 40 |
D-PAK |
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Si6925ADQ | Dual N-Channel 2.5-V (G-S) MOSFET | Vishay |
MOSFET |
N | 2 | 20 | - | - | 50 | 35 | - | 3.3 | 0.8 |
TSSOP-8 |
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IRF7607 | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 20 | - | - | 45 | 30 | - | 6.5 | 1.8 |
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Si9933BDY | Dual P-Channel 2.5-V (G-S) MOSFET | Vishay |
MOSFET |
P | 2 | 20 | - | - | 8 | 48 | - | 3.6 | 1.1 |
SOIC-8 |
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IRF7314 | HEXFET Power MOSFETs Dual P-Channel | International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 98 | 58 | - | 5.3 | 2 |
SOIC-8 |
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NTR3161N | Power MOSFET 20 V, 3.3 A, Single N?Channel, SOT?23 | ON Semiconductor |
MOSFET |
N | 1 | 20 | 52 | - | - | 38 | - | 3.3 | 0.82 |
SOT-23-3 |
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NTE4153N | Small Signal MOSFET 20 V, 915 mA, Single N?Channel with ESD Protection, SC?89 | ON Semiconductor |
MOSFET |
N | 1 | 20 | 242 | - | - | 127 | - | 0.915 | 0.3 |
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Si8407DB | P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | 33 | - | 26 | 22 | - | 5.8 | 1.47 |
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FDC6303N | Digital FET, Dual N-Channel | Fairchild Semiconductor |
MOSFET |
N | 2 | 25 | - | - | 440 | 330 | - | 0.68 | 0.9 |
SSOT-6 |
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Si3867DV | P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | - | - | 81 | 41 | - | 3.9 | 1.1 |
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IRF5806 | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 147 | 86 | - | 4 | 2 |
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DMP2012SN | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | - | 230 | - | -0.7 | 0.5 |
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