Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IRLR8113 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 7.4 | 6 | 94 | 89 |
D-PAK |
| STP75NF20 | N-channel 200V - 0.028? - 75A - TO-220 Low gate charge STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 200 | - | - | - | - | 28 | 75 | 190 |
TO-220 |
| IRLR8726PbF | 30V Single N-Channel HEXFET Power MOSFET |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 5.8 | 4 | 86 | 75 |
D-PAK |
| NTB75N06 | Power MOSFET 75 Amps, 60 Volts N-Channel D2PAK |
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ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 8.2 | 75 | 214 |
D2-PAK |
| IRFI730G | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 400 | - | - | - | - | 1000 | 3.7 | 35 |
TO-220F |
| IRFSL3307ZPBF | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 75 | - | - | - | - | 5.8 | 120 | 230 |
TO-262 |
| STU6NF10 | N-channel 100 V, 0.22 ?, 6 A, IPAK low gate charge STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 220 | 6 | 30 |
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| 2N7002 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 1 | 60 | - | - | - | - | 4400 | 0.115 | 0.3 |
SOT-23-3 |
| FB180SA10 | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 100 | - | - | - | - | 6.5 | 180 | 480 |
SOT-227 |
| IRF7450 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 200 | - | - | - | - | 170 | 2.5 | 3 |
SOIC-8 |
| STD95N4F3 | N-channel 40V - 5.4m? - 80A - DPAK STripFET™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 40 | - | - | - | - | 5.4 | 80 | 110 |
D-PAK |
| TK25Z60X | N-канальныq MOSFET транзистор семейства DTMOS IV-H с рабочим напряжением 600 В |
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Toshiba |
MOSFET |
N | 1 | 600 | - | - | - | - | 12.5 | 25 | 180 |
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| FQA27N25 | 250V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 250 | - | - | - | - | 83 | 27 | 210 |
TO-3PN |
| STP8NM60 | N-channel 650 V@Tjmax, 0.9 ?, 8 A MDmesh™ Power MOSFET TO-220 |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 900 | 8 | 100 |
TO-220 |
| FDP3682 | N-Channel PowerTrench MOSFET 100V, 32A, 36m? |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 32 | 32 | 95 |
TO-220AB |
| TSM4NB50CH | Силовой N-канальный MOSFET транзистор, 500 В, 3 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 2700 | 3 | 45 |
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| Si3434DV | N-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 30 | - | - | 42 | 28 | - | 4.6 | 1.14 |
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| STB24NM65N | N-channel 650 V - 0.16 ? - 19 A - D2PAK second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 160 | 19 | 160 |
D2-PAK |
| IPI023NE7N3G | OptiMOS™ 3 Power-Transistor |
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Infineon Technologies |
MOSFET |
N | 1 | 75 | - | - | - | - | 2.1 | 120 | 300 |
TO-262 |
| IRFI9620G | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 1500 | 3 | 30 |
TO-220F |
