Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
| Si8407DB | P-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 20 | 33 | - | 26 | 22 | - | 5.8 | 1.47 |
|
| SiE822DF | N-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
N | 1 | 20 | - | - | - | 4.5 | 2.8 | 50 | 104 |
|
| HUF75345G3 | N-Channel UltraFET Power MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 55 | - | - | - | - | 7 | 75 | 325 |
|
| STP19NM65N | N-channel 650 V - 0.25 ? - 15.5 A - TO-220 second generation MDmesh™ Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 250 | 15.5 | 150 |
TO-220 |
| NTD5806N | Power MOSFET 40V 33A 19 mOhm Single N-Channel DPAK |
|
ON Semiconductor |
MOSFET |
N | 1 | 40 | - | - | - | 17.8 | 12.7 | 33 | 40 |
D-PAK |
| IXTA5N50P | Стандартный N-канальный силовой MOSFET |
|
IXYS |
MOSFET |
N | 1 | 500 | 1400 | 1400 | 1400 | 1400 | 1400 | 5 | 89 |
|
| TSM3404CX | N-канальный MOSFET транзистор, 30 В, 5.8 А |
|
Taiwan Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 43 | 30 | 5.8 | 0.75 |
SOT-23-3 |
| IRF9Z14 | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 60 | - | - | - | - | 500 | 6.7 | 43 |
TO-220AB |
| IRFI840GLCPBF | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 850 | 4.5 | 40 |
TO-220F |
| STI15NM60ND | N-channel 600 V - 0.27 ? - 14 A - FDmesh™ II Power MOSFET I?PAK |
|
STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 270 | 14 | 125 |
|
| ZVP4424G | SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
|
Zetex |
MOSFET |
P | 1 | -240 | - | - | - | - | 7100 | -0.48 | 2.5 |
SOT-223-4 |
| NTF2955 | Power MOSFET ?60 V, ?2.6 A, Single P?Channel SOT?223 |
|
ON Semiconductor |
MOSFET |
P | 1 | -60 | - | - | - | - | 145 | -2.6 | 2.3 |
SOT-223-4 |
| IXTP6N100D2 | N-канальный силовой MOSFET транзистор с режимом истощения |
|
IXYS |
MOSFET |
N | 1 | 1000 | 2200 | 2200 | 2200 | 2200 | 2200 | 6 | 300 |
TO-220AB |
| IRFP17N50L | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 280 | 16 | 220 |
TO-247AC |
| IRFU4105Z | HEXFET Power MOSFETs Discrete N-Channel |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 55 | - | - | - | - | 24.5 | 30 | 48 |
|
| IXTA90N15T | N-канальный силовой Trench MOSFET транзистор |
|
IXYS |
MOSFET |
N | 1 | 150 | 20 | 20 | 20 | 20 | 20 | 90 | 455 |
|
| STP40NF10L | N-channel 100V - 0.028? - 40A TO-220 Low gate charge STripFET™ II Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 28 | 40 | 150 |
TO-220 |
| ZXMN6A25K | 60V DPAK N-channel enhancement mode MOSFET |
|
Zetex |
MOSFET |
N | 1 | 60 | - | - | - | 70 | 50 | 10.7 | 4.25 |
D-PAK |
| STP6NK90Z | N-channel 900V - 1.56? - 5.8A - TO-220 Zener-protected SuperMESH™ Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 900 | - | - | - | - | 1560 | 5.8 | 140 |
TO-220 |
| IXFB62N80Q3 | N-канальный силовой MOSFET транзистор со встроенным быстрым диодом (HiPerFET) |
|
IXYS |
MOSFET |
N | 1 | 800 | 140 | 140 | 140 | 140 | 140 | 62 | 1560 |
|
