Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
| STFV3N150 | N-channel 1500 V - 6 ? - 2.5 A - PowerMESH™ Power MOSFET TO-220FH |
|
STMicroelectronics |
MOSFET |
N | 1 | 1500 | - | - | - | - | 1100 | 2.5 | 30 |
|
| NTD5803N | Power MOSFET 40 V, 76 A, Single N?Channel, DPAK |
|
ON Semiconductor |
MOSFET |
N | 1 | 40 | - | - | - | - | 4.9 | 76 | 83 |
|
| FA38SA50LC | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 130 | 38 | 500 |
SOT-227 |
| FDMT800152DC | N-канальный MOSFET-транзистор с технологией Dual Cool 88, выполненный на основе техпроцесса PowerTrench®, 150 В, 99 А |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 150 | - | - | - | - | 6.5 | 99 | 156 |
|
| IRF7413Q | HEXFET Power MOSFETs Discrete N-Channel |
|
International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 18 | 11 | 13 | 2.5 |
SOIC-8 |
| STD95N2LH5 | N-channel 25 V, 0.0038 ?, 80 A - DPAK STripFET™ V Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 25 | - | - | - | - | 4.4 | 80 | 70 |
D-PAK |
| STD5NM60 | N-channel 650 V@Tjmax, 0.9 ?, 8 A MDmesh™ Power MOSFET DPAK, IPAK |
|
STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 900 | 5 | 96 |
D-PAK |
| FQD2N90 | 900V N-Channel MOSFET |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 900 | - | - | - | - | 5600 | 1.7 | 50 |
D-PAK |
| Si3410DV | N-Channel 30-V (D-S) MOSFET |
|
Vishay |
MOSFET |
N | 1 | 30 | - | - | - | 19 | 16 | 8 | 4.1 |
|
| FDU8870 | N-Channel PowerTrench MOSFET 30V, 160A, 3.9m? |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 3.6 | 3.2 | 160 | 160 |
|
| STW23NM60ND | N-channel 600 V - 0.150 ? - 20 A - TO-247 FDmesh™ II Power MOSFET (with fast diode) |
|
STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 150 | 20 | 150 |
|
| TSM4N90CI | Силовой N-канальный MOSFET транзистор, 900 В, 4 А |
|
Taiwan Semiconductor |
MOSFET |
N | 1 | 900 | - | - | - | - | 4000 | 4 | 38.7 |
|
| PSMN5R0-30YL | N-channel TrenchMOS logic level FET |
|
NXP |
MOSFET |
N | 1 | 30 | - | - | - | - | 3.63 | 84 | 61 |
|
| IRFI9610G | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 3000 | 2 | 27 |
TO-220F |
| IRF7420 | HEXFET Power MOSFETs Discrete P-Channel |
|
International Rectifier (IRF) |
MOSFET |
P | 1 | 12 | - | - | - | 14 | - | 11.5 | 2.5 |
SOIC-8 |
| RF1S50N06SM | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs |
|
Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 22 | 51 | 131 |
|
| STW20NM60 | N-channel 600V - 0.25? - 20A - TO-247 MDmesh™ Power MOSFET |
|
STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 250 | 20 | 192 |
|
| NTHS4166N | Power MOSFET 30 V, 8.2 A, Single N-Channel, ChipFET Package |
|
ON Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 23 | 18 | 6.6 | 1.5 |
ChipFET_1206-8 |
| 2N7228U | N-CHANNEL MOSFET |
|
Microsemi |
MOSFET |
N | 1 | 500 | - | - | - | - | 415 | 12 | 150 |
|
| IRFP32N50K | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 135 | 32 | 460 |
TO-247AC |
