Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| DMP3035LSS | SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 19 | 12 | -12 | 2.5 |
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| DMP3056LDM | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 65 | 45 | -4.3 | 1.25 |
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| DMP3056LSD | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
P | 2 | -30 | - | - | - | 65 | 45 | -6.9 | 2.5 |
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| DMP3056LSS | SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 65 | 45 | -7.1 | 2.5 |
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| DMP3098L | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 98 | 56 | -3.8 | 1.8 |
SOT-23-3 |
| DMP3098LDM | P-CHANNEL ENHANCEMENT MODE MOSFET |
|
Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 98 | 56 | -4 | 1.25 |
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| DMP3098LSD | DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
|
Diodes Incorporated |
MOSFET |
P | 2 | -30 | - | - | - | 98 | 56 | -4.4 | 1.8 |
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| DMP3098LSS | SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 98 | 56 | -5.3 | 2.5 |
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| DMP3100L | P-CHANNEL ENHANCEMENT MODE MOSFET |
|
Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 147 | 86 | -2.7 | 1.08 |
SOT-23-3 |
| DMP3120L | P-CHANNEL ENHANCEMENT MODE MOSFET |
|
Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 120 | - | -2.8 | 1.4 |
SOT-23-3 |
| DMP3130L | P-CHANNEL ENHANCEMENT MODE MOSFET |
|
Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 73 | 59 | -3.5 | 1.4 |
SOT-23-3 |
| DMP3160L | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 165 | 97 | -2.7 | 1.08 |
SOT-23-3 |
| DMP57D5UFB | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
P | 1 | -50 | - | - | - | - | - | -0.2 | 0.425 |
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| DMP57D5UV | DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
|
Diodes Incorporated |
MOSFET |
P | 2 | -50 | - | - | - | - | - | -0.16 | 0.4 |
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| DMP58D0SV | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
P | 2 | -50 | - | - | - | - | - | -0.16 | 0.4 |
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| EFC6601R | Сдвоенный N-канальный силовой MOSFET-транзистор на 24 В / 13 А / 11.5 мОм, для схем коммутации нагрузки в устройствах заряда/разряда Li-ion аккумуляторных батарей |
|
ON Semiconductor |
MOSFET |
N | 2 | 24 | - | 17 | - | 11.5 | - | 13 | 2 |
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| EFC6602R | Сдвоенный N-канальный силовой MOSFET-транзистор на 12 В / 18 А / 5.9 мОм, для схем коммутации нагрузки в устройствах заряда/разряда Li-ion аккумуляторных батарей |
|
ON Semiconductor |
MOSFET |
N | 2 | 12 | - | 11 | - | 5.9 | - | 18 | 2 |
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| FA38SA50LC | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 130 | 38 | 500 |
SOT-227 |
| FA57SA50LC | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 80 | 57 | 625 |
SOT-227 |
| FB180SA10 | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
N | 1 | 100 | - | - | - | - | 6.5 | 180 | 480 |
SOT-227 |
