Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| ZXMP4A16K | 40V P-channel enhancement mode MOSFET |
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Zetex |
MOSFET |
P | 1 | -40 | - | - | - | 100 | 60 | -9.9 | 4.2 |
D-PAK |
| IXTP96P085T | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -85 | 13 | 13 | 13 | 13 | 13 | -96 | 298 |
TO-220 |
| MMBF2202PT1 | Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323 |
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ON Semiconductor |
MOSFET |
P | 1 | 20 | - | - | - | 2000 | 1500 | 0.3 | 0.15 |
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| Si4941EDY | Dual P-Channel 30-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 2 | 30 | - | - | - | 25 | 17 | 10 | 3.6 |
SOIC-8 |
| FDC610PZ | -30V P-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
P | 1 | 30 | - | - | - | 58 | 36 | 4.9 | 1.6 |
SSOT-6 |
| IRF7704GPBF | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 40 | - | - | - | 74 | 46 | 4.6 | 1.5 |
TSSOP-8 |
| IRF9Z14L | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 60 | - | - | - | - | 500 | 6.7 | 43 |
TO-262 |
| Si5857DU | P-Channel 20-V (D-S) MOSFET with Schottky Diode |
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Vishay |
MOSFET |
P | 1 | 20 | - | - | 81 | 48 | - | 6 | 10.4 |
PowerPAK_ChipFET |
| IRFR9214 | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 250 | - | - | - | - | 3000 | 2.7 | 50 |
D-PAK |
| Si2301BDS | P-Channel 2.5-V (G-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 20 | - | - | 110 | 80 | - | 2.2 | 7 |
SOT-23-3 |
| IXTR36P15P | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -150 | 120 | 120 | 120 | 120 | 120 | -22 | 150 |
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| IXTT24P20 | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -200 | 150 | 150 | 150 | 150 | 150 | -24 | 300 |
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| NTR2101P | Small Signal MOSFET ?8.0 V, ?3.7 A, Single P?Channel, SOT?23 |
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ON Semiconductor |
MOSFET |
P | 1 | -8 | 79 | - | - | 39 | - | -3.7 | 0.96 |
SOT-23-3 |
| Si7905DN | Dual P-Channel 40-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 40 | - | - | - | 65 | 48 | 6 | 20.8 |
PowerPAK_1212-8 |
| TSM2307CX | P-канальный MOSFET транзистор, -30 В, -3 А |
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Taiwan Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 140 | 95 | -3 | 1.25 |
SOT-23-3 |
| TJ15S06M3L | Силовой P-канальный MOSFET-транзистор |
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Toshiba |
MOSFET |
P | 1 | -60 | - | - | - | - | 50 | -30 | 41 |
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| ZVP0545G | SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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Zetex |
MOSFET |
P | 1 | -450 | - | - | - | - | 150000 | -0.075 | 2 |
SOT-223-4 |
| Si2325DS | P-Channel 150-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 150 | - | - | - | - | 1000 | 0.53 | 0.75 |
SOT-23-3 |
| IRF7424 | HEXFET Power MOSFETs Discrete P-Channel |
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International Rectifier (IRF) |
MOSFET |
P | 1 | 30 | - | - | - | 22 | 13.5 | 11 | 2.5 |
SOIC-8 |
| Si5935DC | Dual P-Channel 1.8-V (G-S) MOSFET |
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Vishay |
MOSFET |
P | 2 | 20 | 137 | - | 97 | 69 | - | 3 | 1.1 |
ChipFET_1206-8 |
