Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
IRFP15N60L | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 385 | 15 | 280 |
TO-247AC |
|
STW6NK70Z | N-channel 700V - 1.5? - 5A - TO-247 Zener-protected SuperMESH™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 700 | - | - | - | - | 1500 | 5 | 110 |
|
|
ZXMN6A25DN8 | Dual 60V SO8 N-channel enhancement mode MOSFET | Zetex |
MOSFET |
N | 2 | 60 | - | - | - | 70 | 50 | 5 | 1.25 |
SOIC-8 |
|
IRFU4104 | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 40 | - | - | - | - | 5.5 | 42 | 140 |
|
|
STD40NF10 | N-channel 100V - 0.025? - 50A DPAK Low gate charge STripFET™ II Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 25 | 50 | 125 |
D-PAK |
|
IRF634NPBF | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 250 | - | - | - | - | 435 | 8 | 88 |
TO-220AB |
|
STP12NM60N | N-channel 600V - 0.35? - 10A - TO-220 Second generation MDmesh™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 350 | 10 | 90 |
TO-220 |
|
FQPF55N10 | 100V N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 100 | - | - | - | - | 21 | 34.2 | 60 |
TO-220F |
|
IRF8010S | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | - | 15 | 80 | 260 |
D2-PAK |
|
STP22NF03L | N-channel 30 V, 0.0038 ?, 22 A, TO-220 STripFET™ II Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 30 | - | - | - | - | 38 | 22 | 45 |
TO-220 |
|
SQJ844EP | Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET | Vishay |
MOSFET |
N | 2 | 30 | - | - | - | 37 | 24 | 30 | 48 |
PowerPAK_SO-8 |
|
Si7170DP | N-Channel 30-V (D-S) MOSFET | Vishay |
MOSFET |
N | 1 | 30 | - | - | - | 3.6 | 2.7 | 40 | 48 |
PowerPAK_SO-8 |
|
FQU13N06L | 60V LOGIC N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 92 | 11 | 28 |
|
|
STF7NM50N | N-channel 500V - 0.70? - 5A - TO-220FP Second generation MDmesh™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 500 | - | - | - | - | 700 | 5 | 20 |
|
|
FDMC86139P | P-канальный MOSFET-транзистор с напряжением сток-исток -100 В, выполненный по технологии PowerTrench® | Fairchild Semiconductor |
MOSFET |
P | 1 | -100 | - | - | - | - | 67 | -15 | 40 |
|
|
STD1LNK60Z | N-channel 600V - 13? - 0.8A - IPAK Zener-Protected SuperMESH™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 13000 | 0.8 | 25 |
D-PAK |
|
FQD9N25 | 250V N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 250 | - | - | - | - | 330 | 7.4 | 55 |
D-PAK |
|
IRF1310NL | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | - | 36 | 42 | 160 |
TO-262 |
|
PHB110NQ06LT | N-channel Trenchmos (tm) logic level FET | NXP |
MOSFET |
N | 1 | 55 | - | - | - | 7.1 | 6.2 | 75 | 200 |
D2-PAK |
|
BSC042NE7NS3 | Силовой MOSFET-транзистор серии OptiMOS™3, 75 В, 100 А, 4.2 мОм | Infineon Technologies |
MOSFET |
N | 1 | 75 | - | - | - | - | 4.2 | 100 | 125 |
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