Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
IXTP44P15T | Силовой P-канальный MOSFET-транзистор | IXYS |
MOSFET |
P | 1 | -150 | 65 | 65 | 65 | 65 | 65 | -44 | 298 |
TO-220 |
|
NTS4173P | Power MOSFET ?30 V, ?1.3 A, Single P?Channel, SC?70 | ON Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 110 | 90 | -1.2 | 0.29 |
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NTTS2P03R2 | Power MOSFET ?2.48 Amps, ?30 Volts P?Channel Enhancement Mode Single Micro8 Package | ON Semiconductor |
MOSFET |
P | 1 | -30 | - | - | 100 | 63 | - | -2.48 | 0.78 |
|
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SiB415DK | P-Channel 30-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 130 | 72 | 9 | 13 |
|
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TSM9409CS | P-канальный MOSFET транзистор, -60 В, -3.5 А | Taiwan Semiconductor |
MOSFET |
P | 1 | -60 | - | - | - | 200 | 155 | -3.5 | 3 |
|
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FQP15P12 | 120V P-Channel QFET® | Fairchild Semiconductor |
MOSFET |
P | 1 | -120 | - | - | - | - | 200 | -15 | 100 |
TO-220 |
|
IRLTS2242TRPBF | Однокристальный p-канальный МОП-транзистор с технологией HEXFET на 20В в корпусе TSOP-6 (Micro 6) | International Rectifier (IRF) |
MOSFET |
P | 1 | -20 | - | 55 | - | 32 | - | -6.9 | 2 |
|
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IPP80P03P4L-07 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor | Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | 8.3 | 5.9 | -80 | 88 |
TO-220 |
|
ZXMP10A16K | 100V DPAK P-channel enhancement mode MOSFET | Zetex |
MOSFET |
P | 1 | -100 | - | - | - | - | 235 | 4.6 | 4.24 |
D-PAK |
|
Si3483CDV | P-Channel 30-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 44 | 27 | 8 | 4.2 |
|
|
IRF9520NL | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 100 | - | - | - | - | 480 | 6.8 | 48 |
TO-262 |
|
NTGD3133P | Power MOSFET ?20 V, ?2.5 A, P?Channel, TSOP?6 Dual | ON Semiconductor |
MOSFET |
P | 2 | -20 | - | - | - | 90 | - | -2.2 | 1 |
|
|
IRF9530S | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 100 | - | - | - | - | 300 | 12 | 88 |
D2-PAK |
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Si8441DB | P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | 105 | - | 85 | 66 | - | 10.5 | 13 |
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IRF7207 | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 100 | 60 | - | 5.4 | 2.5 |
SOIC-8 |
|
IRFI9Z14GPBF | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 60 | - | - | - | - | 500 | 5.3 | 27 |
TO-220F |
|
DMP2066LSS | SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | - | 40 | - | -6.5 | 2.5 |
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Si1067X | P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | 165 | - | 138 | 125 | - | 1.06 | 0.236 |
SC89-6 |
|
IXTR16P60P | Силовой P-канальный MOSFET-транзистор | IXYS |
MOSFET |
P | 1 | -600 | 790 | 790 | 790 | 790 | 790 | -10 | 190 |
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IRF7329 | HEXFET Power MOSFETs Dual P-Channel | International Rectifier (IRF) |
MOSFET |
P | 2 | 12 | - | - | 21 | 17 | - | 9.2 | 2 |
SOIC-8 |