Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IRFD220 | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 200 | - | - | - | - | 800 | 0.8 | 1 |
HEXDIP |
| STE40NK90ZD | N-channel 900V - 0.14? - 40A ISOTOP Super FREDmesh™ MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 900 | - | - | - | - | 140 | 40 | 600 |
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| DMN3033LSN | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 1 | 30 | - | - | - | 36 | 25 | 6 | 1.4 |
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| IRFS17N20D | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 200 | - | - | - | - | 170 | 16 | 140 |
D2-PAK |
| STB85NF55 | N-CHANNEL 55V - 0.0062? - 80A - D2PAK STripFET™ II POWER MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 55 | - | - | - | - | 6.2 | 80 | 300 |
D2-PAK |
| FDMS8460 | 40V N-Channel Power Trench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 40 | - | - | - | 2.6 | 2 | 25 | 2.5 |
Power 56 |
| STP4NK60ZFP | N-channel 600 V - 1.76 ? - 4 A SuperMESH™ Power MOSFET T0-220FP |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 1760 | 4 | 25 |
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| FDB13AN06A0 | N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 11.5 | 62 | 115 |
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| IRF6621 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 12.1 | 9.1 | 12 | 42 |
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| NTMFS5C646NL | N-канальный MOSFET-транзистор поколения Trench 6 с напряжением сток-исток 60 В |
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ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | 6.3 | 4.7 | 93 | 79 |
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| STD100NH02L | N-channel 24V - 0.0042? - 60A - DPAK - IPAK STripFET™ II Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 24 | - | - | - | - | 4.2 | 60 | 100 |
D-PAK |
| STB19NM65N | N-channel 650 V - 0.25 ? - 15.5 A - D2PAK second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 250 | 15.5 | 150 |
D2-PAK |
| NTD5804N | Power MOSFET 40V 69A 8.5 mOhm Single N-Channel DPAK |
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ON Semiconductor |
MOSFET |
N | 1 | 40 | - | - | - | 7.9 | 5.7 | 69 | 71 |
D-PAK |
| TSM2NB60CI | Силовой N-канальный MOSFET транзистор, 600 В, 2 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 4400 | 2 | 25 |
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| FQPF12N60CT | 600V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 530 | 12 | 51 |
TO-220F |
| IRF9640SPBF | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 500 | 11 | 125 |
D2-PAK |
| STW15NM60N | N-channel 600V - 0.270? - 14A - TO-247 Second generation MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 270 | 14 | 125 |
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| NTA4153N | Small Signal MOSFET 20 V, 915 mA, Single N?Channel with ESD Protection, SC?75 |
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ON Semiconductor |
MOSFET |
N | 1 | 20 | 242 | - | - | 127 | - | 915 | 300 |
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| ZVP2110G | SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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Zetex |
MOSFET |
P | 1 | -100 | - | - | - | - | 8000 | -0.31 | 2 |
SOT-223-4 |
| IRFI840G | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 850 | 4.6 | 40 |
TO-220F |
