Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
| Si4403BDY | P-Channel 1.8-V (G-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 20 | 24 | - | 18 | 14 | - | 7.3 | 1.35 |
SOIC-8 |
| IXTT20P50P | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -500 | 450 | 450 | 450 | 450 | 450 | -20 | 462 |
|
| IXTT68P20T | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -200 | 55 | 55 | 55 | 55 | 55 | -68 | 568 |
|
| STS4DPF30L | DUAL P-CHANNEL 30V - 0.07 W - 4A SO-8 STripFET™ POWER MOSFET |
|
STMicroelectronics |
MOSFET |
P | 2 | 30 | - | - | - | 85 | 70 | 4 | 2 |
SOIC-8 |
| BSS84W | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
P | 1 | -50 | - | - | - | - | - | -0.13 | 0.2 |
SOT-323 |
| SUD50P06-15L | P-Channel 60-V (D-S) 175°C MOSFET |
|
Vishay |
MOSFET |
P | 1 | 60 | - | - | - | - | 12 | 50 | 136 |
D-PAK |
| PMV48XP | P-канальный MOSFET-транзистор 20В, 3.5А |
|
NXP |
MOSFET |
P | 1 | -20 | 55 | 55 | 55 | 55 | 55 | -3.5 | 0.51 |
SOT-23-3 |
| Si4425BDY | P-Channel 30-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 15 | 10 | 8.8 | 1.5 |
SOIC-8 |
| IRFU5505 | HEXFET Power MOSFETs Discrete P-Channel |
|
International Rectifier (IRF) |
MOSFET |
P | 1 | 55 | - | - | - | - | 110 | 18 | 57 |
|
| IRFD9110 | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 100 | - | - | - | - | 1200 | 0.7 | 1.3 |
HEXDIP |
| SiB417DK | P-Channel 1.2-V (G-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 8 | 76 | - | 58 | 42 | - | 9 | 13 |
|
| SQJ469EP | Automotive P-Channel 80 V (D-S) 175 °C MOSFET |
|
Vishay |
MOSFET |
P | 1 | -80 | - | - | - | - | 25 | -32 | 100 |
PowerPAK_SO-8 |
| IRFU5410 | HEXFET Power MOSFETs Discrete P-Channel |
|
International Rectifier (IRF) |
MOSFET |
P | 1 | 100 | - | - | - | - | 205 | 13 | 66 |
|
| IRFD9110PBF | HEXFET® Power MOSFET |
|
Vishay |
MOSFET |
P | 1 | 100 | - | - | - | - | 1200 | 0.7 | 1.3 |
HEXDIP |
| Si7983DP | Dual P-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 2 | 20 | 20 | - | 16 | 14 | - | 7.7 | 1.4 |
PowerPAK_SO-8 |
| NTMS10P02R2 | Power MOSFET ?10 Amps, ?20 Volts P?Channel Enhancement?Mode Single SOIC?8 Package |
|
ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | - | 12 | - | -10 | 2.5 |
SOIC-8 |
| ZXM66P03N8 | 30V P-CHANNEL ENHANCEMENT MODE MOSFET |
|
Zetex |
MOSFET |
P | 1 | -30 | - | - | - | 35 | 25 | -7.9 | 1.56 |
SOIC-8 |
| BSS84 | P-channel enhancement mode vertical D-MOS transistor |
|
NXP |
MOSFET |
P | 1 | 50 | - | - | - | - | 0.1 | 130 | 250 |
SOT-23-3 |
| Si3867DV | P-Channel 20-V (D-S) MOSFET |
|
Vishay |
MOSFET |
P | 1 | 20 | - | - | 81 | 41 | - | 3.9 | 1.1 |
|
| IXTP44P15T | Силовой P-канальный MOSFET-транзистор |
|
IXYS |
MOSFET |
P | 1 | -150 | 65 | 65 | 65 | 65 | 65 | -44 | 298 |
TO-220 |
