Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| ZXMP3F36N8 | 30V SO8 P-channel enhancement mode MOSFET |
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Zetex |
MOSFET |
P | 1 | -30 | - | - | - | 28 | 20 | -9.6 | 1.56 |
SOIC-8 |
| IPP80P03P4L-04 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
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Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | 5 | 3.7 | -80 | 137 |
TO-220 |
| FDMC6679AZ | P-канальный MOSFET-транзистор PowerTrench® -30 В, 20 А, 10 мОм |
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Fairchild Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 18 | 10 | 20 | 41 |
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| DMP3035LSS | SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 19 | 12 | -12 | 2.5 |
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| ZXMP3F35N8 | 30V SO8 P-channel enhancement mode MOSFET |
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Zetex |
MOSFET |
P | 1 | -30 | - | - | - | 18 | 12 | -12.3 | 1.56 |
SOIC-8 |
| IPI80P03P4L-04 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
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Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | 5 | 3.7 | -80 | 137 |
TO-262 |
| ZXMP3F30FH | 30V SOT23 P-CHANNEL ENHANCEMENT MODE MOSFET |
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Zetex |
MOSFET |
P | 1 | -30 | - | - | - | 140 | 80 | -3.4 | 0.95 |
SOT-23-3 |
| IPB80P03P4L-04 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
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Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | 4.7 | 3.4 | -80 | 137 |
TO-263-3 |
| ZXMP3A17E6 | 30V P-CHANNEL ENHANCEMENT MODE MOSFET |
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Zetex |
MOSFET |
P | 1 | -30 | - | - | - | 110 | 70 | -4 | 1.1 |
SOT-23-6 |
| IPP80P03P4L-07 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | 8.3 | 5.9 | -80 | 88 |
TO-220 |
| ZXMP3A17DN8 | DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET |
|
Zetex |
MOSFET |
P | 2 | -30 | - | - | - | 110 | 70 | -4.4 | 1.25 |
SOIC-8 |
| IPI80P03P4L-07 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | 8.3 | 5.9 | -80 | 88 |
TO-262 |
| NTGS4111P | Power MOSFET ?30 V, ?4.7 A, Single P?Channel, TSOP?6 |
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ON Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 68 | 38 | -3.7 | 1.25 |
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| NTMS4177P | Power MOSFET -30 V, -11.4 A, P-Channel, SOIC-8 |
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ON Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 15 | 10 | -8.9 | 1.52 |
SOIC-8 |
| ZXMP3A16N8 | 30V P-CHANNEL ENHANCEMENT MODE MOSFET |
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Zetex |
MOSFET |
P | 1 | -30 | - | - | - | 70 | 40 | -6.7 | 1.9 |
SOIC-8 |
| IPB80P03P4L-07 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor |
|
Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | 8 | 5.6 | -80 | 88 |
TO-263-3 |
| NTGS3455T1 | MOSFET ?3.5 Amps, ?30 Volts P?Channel TSOP?6 |
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ON Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 144 | 94 | -2.5 | 1 |
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| TSM4953DCS | Сдвоенный P-канальный MOSFET транзистор, -30 В, -4.9 А |
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Taiwan Semiconductor |
MOSFET |
P | 2 | -30 | - | - | - | 90 | 60 | -4.9 | 2.5 |
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| Si7145DP | P-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
P | 1 | -30 | - | - | - | 3 | 2.1 | -60 | 104 |
PowerPAK_SO-8 |
| NTMS4176P | Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8 |
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ON Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 23 | 14 | -7.3 | 1.44 |
SOIC-8 |
