Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| IRF3205S | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 55 | - | - | - | - | 8 | 75 | 200 |
D2-PAK |
| NDS7002A | N-Channel Enhancement Mode Field Effect Transistor |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 1200 | 0.28 | 0.3 |
SOT-23-3 |
| ZVN2120G | SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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Zetex |
MOSFET |
N | 1 | 200 | - | - | - | - | 10000 | 0.32 | 0.002 |
SOT-223-4 |
| STP3N62K3 | N-channel 620 V, 2.2 ? , 2.7 A SuperMESH3™ Power MOSFET TO-220 |
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STMicroelectronics |
MOSFET |
N | 1 | 620 | - | - | - | - | 2200 | 2.7 | 45 |
TO-220 |
| TSM19N20CP | Силовой N-канальный MOSFET транзистор, 200 В, 18 А |
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Taiwan Semiconductor |
MOSFET |
N | 1 | 200 | - | - | - | - | 92 | 18 | 48 |
TO-252 |
| IRL3103 | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 16 | 12 | 64 | 83 |
TO-220AB |
| FDD45AN06LA0 | N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 31 | 25 | 55 |
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| NTMFS4852N | Power MOSFET |
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ON Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 3.3 | 2.1 | 25 | 86.2 |
SOIC-8 |
| IXFR66N50Q2 | N-канальный силовой MOSFET транзистор со встроенным быстрым диодом (HiPerFET) Q2-Class |
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IXYS |
MOSFET |
N | 1 | 500 | 85 | 85 | 85 | 85 | 85 | 50 | 500 |
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| STB141NF55 | N-channel 55V - 0.0065Ом - 80A - STripFET™ II Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 55 | - | - | - | - | 6.5 | 80 | 300 |
D2-PAK |
| IRFI720G | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 400 | - | - | - | - | 1800 | 2.6 | 30 |
TO-220F |
| Si7806ADN | N-Channel 30-V (D-S) MOSFET |
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Vishay |
MOSFET |
N | 1 | 30 | - | - | - | 13 | 9 | 9 | 1.5 |
PowerPAK_1212-8 |
| STP11NM60 | N-channel 650V @ TJmax - 0.4? - 11A TO-220 MDmesh™ Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 650 | - | - | - | - | 400 | 11 | 160 |
TO-220 |
| IXTH3N50D2 | N-канальный силовой MOSFET транзистор с режимом истощения |
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IXYS |
MOSFET |
N | 1 | 500 | 500 | 500 | 500 | 500 | 500 | 6 | 300 |
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| IRFP4242PBF | HEXFET Power MOSFETs Discrete N-Channel |
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International Rectifier (IRF) |
MOSFET |
N | 1 | 300 | - | - | - | - | 59 | 46 | 430 |
TO-247AC |
| FQA90N15_F109 | 150V N-Channel MOSFET |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 150 | - | - | - | - | 14 | 90 | 375 |
TO-3PN |
| FCPF22N60NT | N-канальный MOSFET, 600 В, 22 А, 0.165 Вт |
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Fairchild Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 140 | 22 | 39 |
TO-220F |
| IXTV30N600P | PolarHV Power MOSFET |
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IXYS |
MOSFET |
N | 1 | 600 | - | - | - | - | 240 | 30 | 540 |
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| STP190NF04 | N-channel 40V - 0.0039? - 120A STripFET™ III Power MOSFET |
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STMicroelectronics |
MOSFET |
N | 1 | 40 | - | - | - | - | 3.9 | 120 | 310 |
TO-220 |
| IRCZ44 | HEXFET® Power MOSFET |
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Vishay |
MOSFET |
N | 1 | 60 | - | - | - | - | 28 | 50 | 150 |
TO-220 |
