Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
STP200N4F3 | N-channel 40V - 0.0035? - 120A - TO220 planar STripFET™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 40 | - | - | - | - | 4 | 120 | 300 |
TO-220 |
|
IRF530NL | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | - | 90 | 17 | 79 |
TO-262 |
|
FDA50N50 | 500V N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 500 | - | - | - | - | 89 | 48 | 625 |
TO-3PN |
|
STP30NM60N | N-channel 600 V, 0.1 ?, 25 A, MDmesh™ II Power MOSFET TO-220 | STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 100 | 25 | 190 |
TO-220 |
|
FDMS86255ET150 | N-канальный MOSFET транзистор, выполненный по технологии PowerTrench®, 150 В, 63 А | Fairchild Semiconductor |
MOSFET |
N | 1 | 150 | - | - | - | - | 12.4 | 63 | 136 |
Power 56 |
|
SUP90N15-18P | N-Channel 150-V (D-S) MOSFET | Vishay |
MOSFET |
N | 1 | 150 | - | - | - | - | 14.5 | 90 | 375 |
TO-220 |
|
STD11NM60N | N-channel 600 V - 0.37 ? - 10 A - IPAK DPAK second generation MDmesh™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 370 | 10 | 90 |
D-PAK |
|
FQU18N20V2 | 200V N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 200 | - | - | - | - | 120 | 15 | 2.5 |
|
|
TSM1NB60CP | Силовой N-канальный MOSFET транзистор, 600 В, 0.5 А | Taiwan Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 10000 | 0.5 | 39 |
TO-252 |
|
IPP45N06S4-09 | N-Channel 60V MOSFET OptiMOS®-T2 Power-Transistor | Infineon Technologies |
MOSFET |
N | 1 | 60 | - | - | - | - | 7.9 | 45 | 71 |
TO-220 |
|
IRLZ44SPBF | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 60 | - | - | - | - | 28 | 50 | 150 |
D2-PAK |
|
STB12NM60N | N-channel 600V - 0.35? - 10A - D2/I2PAK Second generation MDmesh™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 350 | 10 | 90 |
D2-PAK |
|
FDMS9620S | Dual N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 2 | 30 | - | - | - | 23 | 18 | 16 | 2.5 |
Power 56 |
|
IRLU4343 | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 55 | - | - | - | 65 | 50 | 26 | 79 |
|
|
IRLS4030-7PPbF | 100V Single N-Channel HEXFET Power MOSFET | International Rectifier (IRF) |
MOSFET |
N | 1 | 100 | - | - | - | 3.3 | 3.2 | 190 | 370 |
D2-PAK-7 |
|
NTD4804N | Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK | ON Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 4.7 | 3.4 | 19 | 2.5 |
D-PAK |
|
IRFIBE30GPBF | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 800 | - | - | - | - | 3000 | 2.1 | 35 |
TO-220F |
|
STB150NF55 | N-channel 55V - 0.005? - 120A - D2PAK STripFET™ II Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 55 | - | - | - | - | 5 | 120 | 300 |
D2-PAK |
|
IRFU2405 | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 55 | - | - | - | - | 16 | 56 | 110 |
|
|
DMN66D0LT | N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
N | 1 | 60 | - | - | - | - | 3000 | 0.115 | 0.2 |
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