Компоненты группы MOSFET транзисторы
| Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
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| CSD16412Q5A | N-Channel CICLON NexFET Power MOSFETs |
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Texas Instruments |
MOSFET |
N | 1 | 25 | - | - | - | 13 | 9 | 52 | 3 |
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| CSD16413Q5A | N-Channel CICLON NexFET Power MOSFETs |
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Texas Instruments |
MOSFET |
N | 1 | 25 | - | - | - | 4.1 | 3.1 | 100 | 3.1 |
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| CSD16414Q5 | N-Channel CICLON NexFET Power MOSFETs |
|
Texas Instruments |
MOSFET |
N | 1 | 25 | - | - | - | 2.1 | 1.5 | 100 | 3.2 |
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| CSD23201W10 | P-Channel CICLON NexFET Power MOSFETs |
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Texas Instruments |
MOSFET |
P | 1 | -12 | - | - | - | 66 | - | -1.1 | 1 |
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| CSD25301W1015 | P-Channel CICLON NexFET Power MOSFETs |
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Texas Instruments |
MOSFET |
P | 1 | -20 | - | - | - | 62 | - | -2.2 | 1.5 |
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| CSD25302Q2 | P-канальный силовой MOSFET NexFET™ |
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Texas Instruments |
MOSFET |
P | 1 | -20 | 71 | - | - | 39 | - | -5 | 2.4 |
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| CSD25401Q3 | P-Channel CICLON NexFET Power MOSFETs |
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Texas Instruments |
MOSFET |
P | 1 | -20 | - | - | - | 8.7 | - | -60 | 2.8 |
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| CSD75204W15 | Сдвоенный P-канальный силовой MOSFET NexFET™ с общим истоком |
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Texas Instruments |
MOSFET |
P | 2 | -20 | 140 | - | - | 80 | - | -3 | 0.7 |
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| CSD75205W1015 | Сдвоенный P-канальный силовой MOSFET NexFET™ с общим истоком |
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Texas Instruments |
MOSFET |
P | 2 | -20 | 145 | - | - | 95 | - | -1.2 | 0.75 |
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| CSD75301W1015 | P-Channel – Dual Common Source CICLON NexFET Power MOSFETs |
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Texas Instruments |
MOSFET |
P | 2 | -20 | - | - | - | 62 | - | -2.2 | 1.5 |
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| CSD86350Q5D | Силовой блок NexFET™ |
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Texas Instruments |
MOSFET |
- | 2 | 25 | - | - | - | 6.6 | - | 0.001 | 2.8 |
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| DMG3415U | P-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
P | 1 | -20 | 51 | - | - | 31 | - | -4 | 0.9 |
SOT-23-3 |
| DMG6968U | N-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
N | 1 | 20 | 28 | - | - | 21 | - | 6.5 | 0.81 |
SOT-23-3 |
| DMN100 | N-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
N | 1 | 30 | - | - | - | 170 | 240 | 1.1 | 0.5 |
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| DMN2004DMK | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 2 | 20 | 700 | - | - | 400 | - | 0.54 | 0.225 |
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| DMN2004DWK | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
N | 2 | 20 | 700 | - | - | 400 | - | 0.54 | 0.2 |
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| DMN2004K | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
|
Diodes Incorporated |
MOSFET |
N | 1 | 20 | 700 | - | - | 400 | - | 0.54 | 0.35 |
SOT-23-3 |
| DMN2004TK | N-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
N | 1 | 20 | 700 | - | - | 400 | - | 0.54 | 0.15 |
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| DMN2004VK | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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Diodes Incorporated |
MOSFET |
N | 2 | 20 | 700 | - | - | 400 | - | 0.54 | 0.25 |
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| DMN2004WK | N-CHANNEL ENHANCEMENT MODE MOSFET |
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Diodes Incorporated |
MOSFET |
N | 1 | 20 | 700 | - | - | 400 | - | 0.54 | 0.2 |
SOT-323 |
