Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
2N7002VA | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 2 | 60 | - | - | - | - | 13500 | 0.28 | 0.15 |
|
|
NTJD4401N | Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection | ON Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 290 | - | 0.63 | 0.91 |
|
|
Si7960DP | Dual N-Channel 60-V (D-S) MOSFET | Vishay |
MOSFET |
N | 2 | 60 | - | - | - | 20 | 17 | 6.2 | 1.4 |
PowerPAK_SO-8 |
|
IRF7103IPBF | HEXFET Power MOSFETs Dual N-Channel | International Rectifier (IRF) |
MOSFET |
N | 2 | 50 | - | - | - | 200 | 130 | 3 | 2 |
SOIC-8 |
|
MAX15025A | 16нс, двухканальные драйверы транзисторов MOSFET с высоким номиналом входного и выходного тока, регулируемым стабилизатором со сверхнизким падением напряжения в корпусе TDFN | Maxim Integrated |
Ключи и драйверы MOSFET |
- | 2 | - | - | - | - | - | - | 8 | - |
|
|
Si4834BDY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode | Vishay |
MOSFET |
N | 2 | 30 | - | - | - | 24 | 17 | 5.7 | 1.1 |
SOIC-8 |
|
FDC6401N | Dual N-Channel 2.5V Specified PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 50 | - | 3 | 0.96 |
SSOT-6 |
|
IRF5850 | HEXFET Power MOSFETs Dual P-Channel | International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 220 | 135 | - | 2.2 | 0.96 |
|
|
FDS6911 | Dual N-Channel Logic Level PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 13 | 10.6 | 7.5 | 1.6 |
SOIC-8 |
|
NTGD1100L | Power MOSFET 8 V, ±3.3 A, Load Switch with Level?Shift, P?Channel, TSOP?6 | ON Semiconductor |
MOSFET |
P | 2 | 8 | 80 | - | - | 40 | - | 3.3 | 0.83 |
|
|
SQJ980EP | Automotive Dual N-Channel 75 V (D-S) 175 °C MOSFET | Vishay |
MOSFET |
N | 2 | 75 | - | - | - | 70 | 50 | 8 | 34 |
PowerPAK_SO-8 |
|
IRFI4212H-117P | HEXFET Power MOSFETs Dual N-Channel | International Rectifier (IRF) |
MOSFET |
N | 2 | 100 | - | - | - | - | 72.5 | 11 | 18 |
TO-220 |
|
2N7002V | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 2 | 60 | - | - | - | - | 13500 | 0.28 | 0.15 |
|
|
NTJD4152P | Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88 | ON Semiconductor |
MOSFET |
P | 2 | -20 | 600 | - | - | 215 | - | -0.88 | 0.272 |
|
|
IRF7103Q | HEXFET Power MOSFETs Dual N-Channel | International Rectifier (IRF) |
MOSFET |
N | 2 | 50 | - | - | - | 200 | 130 | 3 | 2.4 |
SOIC-8 |
|
FDP8870 | Dual N-Channel 2.5V Specified PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 16.5 | - | 7.3 | 1.6 |
|
|
IXTL2x180N10T | N-канальный силовой TrenchMV MOSFET транзистор | IXYS |
MOSFET |
N | 2 | 100 | 9 | 9 | 9 | 9 | 9 | 100 | 150 |
|
|
Si4830ADY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode | Vishay |
MOSFET |
N | 2 | 30 | - | - | - | 24 | 17 | 5.7 | 1.1 |
SOIC-8 |
|
CSD86350Q5D | Силовой блок NexFET™ | Texas Instruments |
MOSFET |
- | 2 | 25 | - | - | - | 6.6 | - | 0.001 | 2.8 |
|
|
IRF7104 | HEXFET Power MOSFETs Dual P-Channel | International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | - | 400 | 250 | 2.3 | 2 |
SOIC-8 |