Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
FDS3601 | 100V Dual N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 2 | 100 | - | - | - | - | 350 | 1.3 | 1.6 |
SOIC-8 |
|
FDS6982AS | Dual Notebook Power Supply N-Channel PowerTrench SyncFET | Fairchild Semiconductor |
MOSFET |
N | 2 | 30 | - | - | - | 13 | 11 | 8.6 | 2 |
SOIC-8 |
|
ZXMN2A04DN8 | DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET | Zetex |
MOSFET |
N | 2 | 20 | - | - | - | 25 | - | 7.7 | 2.1 |
SOIC-8 |
|
IRF7331 | HEXFET Power MOSFETs Dual N-Channel | International Rectifier (IRF) |
MOSFET |
N | 2 | 20 | - | - | 45 | 30 | - | 7 | 2 |
SOIC-8 |
|
Si5908DC | Dual N-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
N | 2 | 20 | 42 | - | 36 | 32 | - | 4.4 | 1.1 |
ChipFET_1206-8 |
|
DMN66D0LDW | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 2 | 60 | - | - | - | - | 3000 | 0.8 | 0.25 |
|
|
Si4963BDY | Dual P-Channel 2.5-V (G-S) MOSFET | Vishay |
MOSFET |
P | 2 | 20 | - | - | 40 | 25 | - | 4.9 | 1.1 |
SOIC-8 |
|
Si4670DY | Dual N-Channel 25-V (D-S) MOSFET with Schottky Diode | Vishay |
MOSFET |
N | 2 | 25 | - | - | - | 23 | 19 | 8 | 2.8 |
SOIC-8 |
|
NTMD4820N | Power MOSFET 30 V, 8 A, Dual N?Channel, SOIC?8 | ON Semiconductor |
MOSFET |
N | 2 | 30 | - | - | - | 20 | 15 | 6.4 | 1.28 |
SOIC-8 |
|
SiA917DJ | Dual P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 2 | 20 | - | - | 152 | 91 | - | 4.5 | 6.5 |
PowerPAK SC70-6 |
|
IRF7316QPBF | HEXFET Power MOSFETs Dual P-Channel | International Rectifier (IRF) |
MOSFET |
P | 2 | 30 | - | - | - | 98 | 58 | 4.9 | 2 |
SOIC-8 |
|
FDG6301N | Dual N-Channel, Digital FET | Fairchild Semiconductor |
MOSFET |
N | 2 | 25 | - | - | 3700 | 2600 | 2600 | 0.22 | 0.3 |
SC70-6 |
|
IXTL2x220N075T | N-канальный силовой TrenchMV MOSFET транзистор | IXYS |
MOSFET |
N | 2 | 75 | 5.5 | 5.5 | 5.5 | 5.5 | 5.5 | 120 | 150 |
|
|
DMN3033LSD | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
N | 2 | 30 | - | - | - | 33 | 22 | 6.9 | 2 |
|
|
Si7160DP | N-Channel 30-V (D-S) MOSFET with Schottky Diode | Vishay |
MOSFET |
N | 2 | 30 | - | - | - | 8.3 | 7.2 | 20 | 27.7 |
PowerPAK_SO-8 |
|
Si4973DY | Dual P-Channel 25-V (G-S) MOSFET | Vishay |
MOSFET |
P | 2 | 30 | - | - | - | - | 18 | 5.8 | 1.1 |
SOIC-8 |
|
FDG8850NZ | Dual N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 2 | 30 | - | - | 290 | 250 | - | 0.75 | 0.36 |
SC70-6 |
|
Si4946BEY | Dual N-Channel 60-V (D-S) MOSFET | Vishay |
MOSFET |
N | 2 | 60 | - | - | - | 41 | 33 | 6.5 | 3.7 |
SOIC-8 |
|
IRF7341 | HEXFET Power MOSFETs Dual N-Channel | International Rectifier (IRF) |
MOSFET |
N | 2 | 55 | - | - | - | 65 | 50 | 4.7 | 2 |
SOIC-8 |
|
Si5904DC | Dual N-Channel 2.5-V (G-S) MOSFET | Vishay |
MOSFET |
N | 2 | 20 | - | - | 115 | 65 | - | 3.1 | 1.1 |
ChipFET_1206-8 |