Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
ZXMP3A16N8 | 30V P-CHANNEL ENHANCEMENT MODE MOSFET | Zetex |
MOSFET |
P | 1 | -30 | - | - | - | 70 | 40 | -6.7 | 1.9 |
SOIC-8 |
|
Si3473CDV | P-Channel 12-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 12 | 26 | - | 21 | 16 | - | 8 | 4.2 |
|
|
IXTQ52P10P | Силовой P-канальный MOSFET-транзистор | IXYS |
MOSFET |
P | 1 | -100 | 50 | 50 | 50 | 50 | 50 | -52 | 300 |
|
|
IXTY32P05T | Силовой P-канальный MOSFET-транзистор | IXYS |
MOSFET |
P | 1 | -50 | 39 | 39 | 39 | 39 | 39 | -32 | 83 |
TO-252 |
|
Si7469DP | P-Channel 80-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 80 | - | - | - | 24 | 21 | 28 | 83 |
PowerPAK_SO-8 |
|
TSM4953DCS | Сдвоенный P-канальный MOSFET транзистор, -30 В, -4.9 А | Taiwan Semiconductor |
MOSFET |
P | 2 | -30 | - | - | - | 90 | 60 | -4.9 | 2.5 |
|
|
IRF5210L | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 100 | - | - | - | - | 60 | 38 | 200 |
TO-262 |
|
NTGS3441B | Power MOSFET -20 V, -3.5 A, Single P-Channel, TSOP-6 | ON Semiconductor |
MOSFET |
P | 1 | -20 | - | - | - | 59 | - | -3 | 1.1 |
|
|
IRF9610 | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 200 | - | - | - | - | 3000 | 1.8 | 20 |
TO-220AB |
|
Si8429DB | P-Channel 1.2-V (G-S) MOSFET | Vishay |
MOSFET |
P | 1 | 8 | 43 | - | 35 | 29 | - | 11.7 | 6.25 |
|
|
IRF6215 | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 150 | - | - | - | - | 290 | 13 | 110 |
TO-220AB |
|
DMP2160U | P-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
P | 1 | -20 | 92 | - | - | 60 | - | -3.2 | 1.4 |
SOT-23-3 |
|
IRFL9014PBF | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 60 | - | - | - | - | 500 | 1.8 | 3.1 |
SOT-223-4 |
|
Si4963BDY | Dual P-Channel 2.5-V (G-S) MOSFET | Vishay |
MOSFET |
P | 2 | 20 | - | - | 40 | 25 | - | 4.9 | 1.1 |
SOIC-8 |
|
IXTN32P60P | Силовой P-канальный MOSFET-транзистор | IXYS |
MOSFET |
P | 1 | -600 | 350 | 350 | 350 | 350 | 350 | -32 | 890 |
SOT-227 |
|
IRF7314Q | HEXFET Power MOSFETs Dual P-Channel | International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 98 | 58 | - | 5.2 | 2.4 |
SOIC-8 |
|
STN3PF06 | P-channel 60 V - 0.20 ? - 2.5 A - SOT-223 STripFET™ II Power MOSFET | STMicroelectronics |
MOSFET |
P | 1 | 60 | - | - | - | - | 200 | 2.5 | 2.5 |
SOT-223-4 |
|
ZXMP6A16DN8 | DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET | Zetex |
MOSFET |
P | 2 | -60 | - | - | - | 125 | 85 | -3.9 | 1.25 |
SOIC-8 |
|
SUM90P10-19L | P-Channel 100-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 100 | - | - | - | 17.3 | 15.6 | 90 | 375 |
D2-PAK |
|
IXTP28P065T | Силовой P-канальный MOSFET-транзистор | IXYS |
MOSFET |
P | 1 | -65 | 45 | 45 | 45 | 45 | 45 | -28 | 83 |
TO-220 |