Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
DMP2066LSN | P-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
P | 1 | -20 | - | - | - | 29 | - | -4.6 | 1.25 |
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Si2302ADS | N-Channel 2.5-V (G-S) MOSFET | Vishay |
MOSFET |
N | 1 | 20 | - | - | 70 | 45 | - | 2.1 | 0.7 |
SOT-23-3 |
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Si1303EDL | P-Channel 2.5-V (G-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | - | - | 560 | 360 | - | 0.67 | 0.29 |
SC70-3 |
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NTJD2152P | Trench Small Signal MOSFET 8 V, Dual P?Channel, SC?88 ESD Protection | ON Semiconductor |
MOSFET |
P | 2 | -8 | 510 | - | - | 220 | - | -0.775 | 0.27 |
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ZXMN2F34FH | 20V SOT23 N-channel enhancement mode MOSFET | Zetex |
MOSFET |
N | 1 | 20 | - | - | - | 60 | - | 4 | 1.4 |
SOT-23-3 |
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FDN306P | P-Channel 1.8V Specified PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
P | 1 | -12 | 54 | 39 | - | 30 | - | -10 | 0.5 |
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IRLTS2242TRPBF | Однокристальный p-канальный МОП-транзистор с технологией HEXFET на 20В в корпусе TSOP-6 (Micro 6) | International Rectifier (IRF) |
MOSFET |
P | 1 | -20 | - | 55 | - | 32 | - | -6.9 | 2 |
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IRF7301 | HEXFET Power MOSFETs Dual N-Channel | International Rectifier (IRF) |
MOSFET |
N | 2 | 20 | - | - | 70 | 50 | - | 5.2 | 2 |
SOIC-8 |
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FDW2503N | Dual N-Channel 2.5V Specified PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 17 | - | 5.5 | 1 |
TSSOP-8 |
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Si6968BEDQ | Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection | Vishay |
MOSFET |
N | 2 | 20 | - | - | 23 | 165 | - | 5.2 | 1 |
TSSOP-8 |
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Si9934BDY | Dual P-Channel 2.5-V (G-S) MOSFET | Vishay |
MOSFET |
P | 2 | 12 | - | - | 44 | 28 | - | 4.8 | 1.1 |
SOIC-8 |
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TSM9428CS | N-канальный MOSFET транзистор, 20 В, 6 А | Taiwan Semiconductor |
MOSFET |
N | 1 | 20 | - | 40 | - | 30 | - | 6 | 2.5 |
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ZVN4424A | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | Zetex |
MOSFET |
N | 1 | 240 | - | - | - | - | - | 0.26 | 0.75 |
TO-92 |
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IRF7304Q | HEXFET Power MOSFETs Dual P-Channel | International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 140 | 90 | - | 4.3 | 2 |
SOIC-8 |
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NTR4101P | Trench Power MOSFET ?20 V, Single P?Channel, SOT?23 | ON Semiconductor |
MOSFET |
P | 1 | -20 | 112 | - | - | 70 | - | -2.4 | 0.73 |
SOT-23-3 |
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NTA7002N | Small Signal MOSFET 30 V, 154 mA, Single, N-Channel, Gate ESD Protection, SC-75 | ON Semiconductor |
MOSFET |
N | 1 | 300 | 242 | - | - | 1400 | - | 0.154 | 0.3 |
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Si7911DN | Dual P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 2 | 20 | 75 | - | 54 | 40 | - | 4.2 | 1.3 |
PowerPAK_1212-8 |
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TSM3446CX6 | N-канальный MOSFET транзистор, 20 В, 5.3 А | Taiwan Semiconductor |
MOSFET |
N | 1 | 20 | - | 40 | - | 33 | - | 5.3 | 2 |
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NTF3055L175 | Power MOSFET 2.0 A, 60 V, Logic Level N?Channel SOT?223 | ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | - | 2 | 2.1 |
SOT-223-4 |
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Si3467DV | P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | - | - | 73 | 42 | - | 3.8 | 1.14 |
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