Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
Si4409DY | P-Channel 150-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 150 | - | - | - | - | 95 | 1.3 | 4.6 |
SOIC-8 |
|
IRLMS6702 | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 375 | 200 | - | 2.4 | 1.7 |
|
|
IRF9Z24PBF | HEXFET® Power MOSFET | Vishay |
MOSFET |
P | 1 | 60 | - | - | - | - | 280 | 11 | 60 |
TO-220AB |
|
SiA415DJ | P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | - | - | 42 | 29 | - | 12 | 19 |
PowerPAK SC70-6 |
|
DMP3120L | P-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 120 | - | -2.8 | 1.4 |
SOT-23-3 |
|
BSH201 | P-channel enhancement mode MOS transistor | NXP |
MOSFET |
P | 1 | 60 | - | - | - | 2700 | 2100 | 0.3 | 0.417 |
SOT-23-3 |
|
Si2305DS | P-Channel 1.25-W, 1.8-V (G-S) MOSFET | Vishay |
MOSFET |
P | 1 | 8 | 87 | - | 60 | 44 | - | 3.5 | 1.25 |
SOT-23-3 |
|
IXTK210P10T | Силовой P-канальный MOSFET-транзистор | IXYS |
MOSFET |
P | 1 | -100 | 7.5 | 7.5 | 7.5 | 7.5 | 7.5 | -210 | 1040 |
|
|
IXTH48P20P | Силовой P-канальный MOSFET-транзистор | IXYS |
MOSFET |
P | 1 | -200 | 85 | 85 | 85 | 85 | 85 | -48 | 462 |
|
|
NTR4171P | Power MOSFET ?30 V, ?3.5 A, Single P?Channel, SOT?23 | ON Semiconductor |
MOSFET |
P | 1 | -30 | - | - | - | 60 | 50 | -2.2 | 0.48 |
SOT-23-3 |
|
Si7415DN | P-Channel 60-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 60 | - | - | - | 90 | 54 | 3.6 | 1.5 |
PowerPAK_1212-8 |
|
TSM3443CX6 | P-канальный MOSFET транзистор, -20 В, -4.7 А | Taiwan Semiconductor |
MOSFET |
P | 1 | -20 | - | 100 | - | 60 | - | -4.7 | 2 |
|
|
IPD50P03P4L-11 | P-Channel 30V MOSFET OptiMOS®-P2 Power-Transistor | Infineon Technologies |
MOSFET |
P | 1 | -30 | - | - | - | 13 | 8.3 | -50 | 58 |
TO-252 |
|
ZXMP2120G4 | 200V P-CHANNEL ENHANCEMENT MODE MOSFET | Zetex |
MOSFET |
P | 1 | -200 | - | - | - | - | 25000 | -0.2 | 2 |
SOT-223-4 |
|
Si2307BDS | P-Channel 30-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 30 | - | - | - | 105 | 63 | 2.5 | 0.75 |
SOT-23-3 |
|
IRF7663 | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 40 | 20 | - | 8.2 | 1.8 |
|
|
NTE4151P | Small Signal MOSFET ?20 V, ?760 mA, Single P?Channel, Gate Zener, SC?89 | ON Semiconductor |
MOSFET |
P | 1 | -20 | 490 | - | - | 260 | - | -760 | 301 |
|
|
Si5433BDC | P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 20 | 56 | - | 41 | 30 | - | 4.8 | 1.3 |
ChipFET_1206-8 |
|
IRF7707 | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 20 | - | - | 18.9 | 14.3 | - | 7 | 1.5 |
TSSOP-8 |
|
NTMD3P03R2 | Power MOSFET ?3.05 Amps, ?30 Volts Dual P?Channel SOIC?8 | ON Semiconductor |
MOSFET |
P | 2 | -30 | - | - | - | 90 | 63 | -2.34 | 0.73 |
SOIC-8 |