Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
BST82 | N-канальный полевой транзистор | NXP |
MOSFET |
N | 1 | 100 | - | - | - | 10000 | - | 0.19 | 0.83 |
SOT-23-3 |
|
NCV8402D | Защищенные MOSFET-транзисторы для управления вторичными цепями | ON Semiconductor |
MOSFET |
N | 1 | 42 | - | - | - | - | 165 | 2 | 1.62 |
SOIC-8 |
|
PHP36N03LT | N-channel TrenchMOS logic level FET | NXP |
MOSFET |
N | 1 | 30 | - | - | - | 18 | 14 | 43.4 | 57.6 |
|
|
Si7138DP | N-Channel 60-V (D-S) Reduced Qgd, Fast Switching WFET | Vishay |
MOSFET |
N | 1 | 60 | - | - | - | - | 6.5 | 30 | 96 |
PowerPAK_SO-8 |
|
TK8S06K3L | Силовой N-канальный MOSFET-транзистор для автомобильных приложений | Toshiba |
MOSFET |
N | 1 | 60 | - | - | - | - | 54 | 8 | 25 |
|
|
NTP125N02R | Power MOSFET 125 A, 24 V N?Channel TO-220 | ON Semiconductor |
MOSFET |
N | 1 | 24 | - | - | - | 4.9 | 3.7 | 125 | 113.6 |
TO-220 |
|
HUF75545P3 | N-Channel, UltraFET Power MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 80 | - | - | - | - | 8.2 | 75 | 270 |
TO-220AB |
|
FCPF16N60NT | N-Channel MOSFET 600V, 16A, 0.170W | Fairchild Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 170 | 16 | 35.7 |
TO-220F |
|
STB11NM60N | N-channel 600 V - 0.37 ? - 10 A - I2PAK - D2PAK second generation MDmesh™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 370 | 10 | 90 |
D2-PAK |
|
IRFR420 | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 500 | - | - | - | - | 3000 | 2.4 | 42 |
D-PAK |
|
MGSF1N03LT1 | Power MOSFET 30 V, 2.1 A, Single N?Channel, SOT?23 | ON Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 125 | 80 | 2.1 | 0.73 |
SOT-23-3 |
|
FDC5661N_F085 | N-Channel Logic Level PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | 46 | 38 | 4.3 | 1.6 |
SSOT-6 |
|
IRL8113 | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 30 | - | - | - | 7.1 | 6 | 105 | 110 |
TO-220AB |
|
DMP3098LDM | P-CHANNEL ENHANCEMENT MODE MOSFET | Diodes Incorporated |
MOSFET |
P | 1 | -30 | - | - | - | 98 | 56 | -4 | 1.25 |
|
|
STF19NF20 | N-channel 200V - 0.15? - 15A - TO-220FP MESH OVERLAY™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 200 | - | - | - | - | 150 | 15 | 25 |
|
|
IXTN550N055T2 | N-канальный силовой TrenchT2 MOSFET транзистор | IXYS |
MOSFET |
N | 1 | 55 | 1.3 | 1.3 | 1.3 | 1.3 | 1.3 | 550 | 940 |
SOT-227 |
|
IRFBC40LPBF | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 1200 | 6.2 | 3.1 |
TO-262 |
|
STP7NK80Z | N-channel 800V - 1.5? - 5.2A - TO-220 Zener-protected SuperMESH™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 800 | - | - | - | - | 1500 | 5.2 | 125 |
TO-220 |
|
IXTA220N055T | N-канальный силовой TrenchMV MOSFET транзистор | IXYS |
MOSFET |
N | 1 | 55 | 4 | 4 | 4 | 4 | 4 | 220 | 430 |
|
|
IRFR3504 | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 40 | - | - | - | - | 9.2 | 30 | 140 |
D-PAK |