Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
powerSTEP01 | Микросхема функциональной Системы-в-Корпусе (SiP) на базе восьми N-канальных MOSFET транзисторов и программируемого контроллера с интерфейсом SPI | STMicroelectronics |
MOSFET |
N | 8 | - | - | - | - | - | 21 | 10 | - |
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FDMQ86530L | Счетверенный N-канальный PowerTrench® MOSFET-транзистор на 60 В, 8 А, серии GreenBridge™ | Fairchild Semiconductor |
MOSFET |
N | 4 | 60 | - | - | - | 25 | 17.5 | 8 | 22 |
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19MT050XF | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 4 | 500 | - | - | - | - | 210 | 31 | 1140 |
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NTMD4840N | Power MOSFET 30 V, 7.5 A, Dual N-Channel, SOIC-8 | ON Semiconductor |
MOSFET |
N | 2 | 30 | - | - | - | 28 | 17 | 5.5 | 1.14 |
SOIC-8 |
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FDC6305N | Dual N-Channel 2.5V Specified PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | - | 60 | 2.7 | 0.96 |
SSOT-6 |
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IRF7314Q | HEXFET Power MOSFETs Dual P-Channel | International Rectifier (IRF) |
MOSFET |
P | 2 | 20 | - | - | 98 | 58 | - | 5.2 | 2.4 |
SOIC-8 |
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FDC3601N | Dual N-Channel 100V Specified PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 2 | 100 | - | - | - | - | 370 | 1 | 0.96 |
SSOT-6 |
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FDG6335N | 20V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 180 | - | 0.7 | 0.3 |
SC70-6 |
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Si1902DL | Dual N-Channel 2.5-V (G-S) MOSFET | Vishay |
MOSFET |
N | 2 | 20 | - | - | 560 | 320 | - | 0.6 | 0.27 |
SC70-6 |
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FDMA1028NZ | Dual N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 37 | - | 3.7 | 1.4 |
MicroFET |
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ZXMN2AM832 | MPPS Miniature Package Power Solutions DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET | Zetex |
MOSFET |
N | 2 | 20 | - | - | - | 25 | - | 3.7 | 1.5 |
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IRF7313QPBF | HEXFET Power MOSFETs Dual N-Channel | International Rectifier (IRF) |
MOSFET |
N | 2 | 30 | - | - | - | 46 | 29 | 6.5 | 2 |
SOIC-8 |
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Si5920DC | Dual N-Channel 1.5V (G-S) MOSFET | Vishay |
MOSFET |
N | 2 | 8 | 36 | - | 285 | 25 | - | 4 | 3.12 |
ChipFET_1206-8 |
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FDMS9620S | Dual N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 2 | 30 | - | - | - | 23 | 18 | 16 | 2.5 |
Power 56 |
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Si4943CDY | Dual P-Channel 20-V (D-S) MOSFET | Vishay |
MOSFET |
P | 2 | 20 | - | - | - | 27.5 | 16 | 8 | 3.1 |
SOIC-8 |
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IRF7316 | HEXFET Power MOSFETs Dual P-Channel | International Rectifier (IRF) |
MOSFET |
P | 2 | 30 | - | - | - | 98 | 58 | 4.9 | 2 |
SOIC-8 |
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ZXMN6A25DN8 | Dual 60V SO8 N-channel enhancement mode MOSFET | Zetex |
MOSFET |
N | 2 | 60 | - | - | - | 70 | 50 | 5 | 1.25 |
SOIC-8 |
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SQJ844EP | Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET | Vishay |
MOSFET |
N | 2 | 30 | - | - | - | 37 | 24 | 30 | 48 |
PowerPAK_SO-8 |
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FDS6892A | Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 13 | - | 7.5 | 1.6 |
SOIC-8 |
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DMP2004VK | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
MOSFET |
P | 2 | -20 | 1700 | - | - | 700 | - | -0.53 | 0.4 |
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