Компоненты группы MOSFET транзисторы
Название | Описание | Производитель | Группа компонент | Полярность | Каналов шт |
VDS В |
RDS(ON) 1.8 В мОм |
RDS(ON) 2,5 В мОм |
RDS(ON) 2,7 В мОм |
RDS(ON) 4.5 В мОм |
RDS(ON) 10 В мОм |
ID А |
PD Вт |
Корпус | |
FQU9N25 | 250V N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 250 | - | - | - | - | 330 | 7.4 | 55 |
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PH2925U | N-channel TrenchMOS ultra low level FET | NXP |
MOSFET |
N | 1 | 25 | - | - | 3.2 | 2.3 | - | 100 | 62.5 |
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SiE832DF | N-Channel 40-V (D-S) MOSFET | Vishay |
MOSFET |
N | 1 | 40 | - | - | - | 5.8 | 4.6 | 50 | 104 |
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STP4NK60Z | N-channel 600 V - 1.76 ? - 4 A SuperMESH™ Power MOSFET TO-220 | STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 176 | 4 | 70 |
TO-220 |
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NTMFS4821N | Power MOSFET 30 V, 58.5 A, Single N-Channel, SO-8 FL | ON Semiconductor |
MOSFET |
N | 1 | 30 | - | - | - | 8.6 | 5.3 | 13.8 | 2.4 |
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IRF6215 | HEXFET Power MOSFETs Discrete P-Channel | International Rectifier (IRF) |
MOSFET |
P | 1 | 150 | - | - | - | - | 290 | 13 | 110 |
TO-220AB |
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FDG6335N | 20V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 2 | 20 | - | - | - | 180 | - | 0.7 | 0.3 |
SC70-6 |
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IRF6718 | N-Channel HEXFET Power MOSFET in a DirectFET L2 package | International Rectifier (IRF) |
MOSFET |
N | 1 | 25 | - | - | - | 1 | 0.5 | 61 | 4.3 |
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IRFPS30N60K | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 160 | 30 | 450 |
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STD16NF25 | N-channel 250V - 0.195? - 13A - DPAK low gate charge STripFET™ Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 250 | - | - | - | - | 195 | 13 | 90 |
D-PAK |
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NTB5411N | Power MOSFET 80 Amps, 60 Volts N-Channel D2PAK | ON Semiconductor |
MOSFET |
N | 1 | 60 | - | - | - | - | 8.4 | 80 | 166 |
D2-PAK |
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IRL3714 | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 20 | - | - | - | 28 | 20 | 36 | 43 |
TO-220AB |
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FDP047N08 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 75 | - | - | - | - | 3.7 | 164 | 268 |
TO-220 |
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IRFBC30 | HEXFET® Power MOSFET | Vishay |
MOSFET |
N | 1 | 600 | - | - | - | - | 2200 | 3.6 | 74 |
TO-220AB |
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STP120NF10 | N-channel 100V - 0.009? - 110A - TO-220 STripFET™ II Power MOSFET | STMicroelectronics |
MOSFET |
N | 1 | 100 | - | - | - | - | 9 | 110 | 312 |
TO-220 |
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STW30NM60ND | N-channel 600 V, 0.11 ?, 25 A FDmesh™ II Power MOSFET(with fast diode) TO-247 | STMicroelectronics |
MOSFET |
N | 1 | 600 | - | - | - | - | 110 | 25 | 190 |
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IRFP4242PBF | HEXFET Power MOSFETs Discrete N-Channel | International Rectifier (IRF) |
MOSFET |
N | 1 | 300 | - | - | - | - | 59 | 46 | 430 |
TO-247AC |
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FQP5N40 | 400V N-Channel MOSFET | Fairchild Semiconductor |
MOSFET |
N | 1 | 400 | - | - | - | - | 1270 | 4.5 | 70 |
TO-220 |
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Si4455DY | P-Channel 150-V (D-S) MOSFET | Vishay |
MOSFET |
P | 1 | 150 | - | - | - | - | 245 | 2.8 | 5.9 |
SOIC-8 |
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FCH043N60 | N-канальный MOSFET-транзистор семейства SuperFET® II, 600 В, 75 А | Fairchild Semiconductor |
MOSFET |
N | 1 | 600 | - | - | - | - | 43 | 75 | 592 |
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